公开(公告)号：US10978340B2

公开(公告)日：2021-04-13

申请号：US16384147

申请日：2019-04-15

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Didier Dutartre ,  Jean-Pierre Carrere ,  Jean-Luc Huguenin ,  Clement Pribat ,  Sarah Kuster

IPC: H01L27/12 ,  H01L27/146 ,  H01L27/06 ,  H01L27/07 ,  H01L29/06 ,  H01L29/10 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/84 ,  H01L21/762 ,  H01L21/74 ,  H01L21/02

Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.

公开(公告)号：US20170294379A1

公开(公告)日：2017-10-12

申请号：US15093416

申请日：2016-04-07

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Didier Dutartre ,  Jean-Pierre Carrere ,  Jean-Luc Huguenin ,  Clement Pribat ,  Sarah Kuster

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/84 ,  H01L29/06 ,  H01L27/12

CPC classification number: H01L21/76877 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/7624 ,  H01L21/823475 ,  H01L21/84 ,  H01L27/1207 ,  H01L29/0649

Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.

公开(公告)号：US09685472B2

公开(公告)日：2017-06-20

申请号：US15050579

申请日：2016-02-23

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Axel Crocherie ,  Michel Marty ,  Jean-Luc Huguenin ,  Sébastien Jouan

IPC: H01L21/00 ,  H01L31/113 ,  H01L27/146 ,  H01L29/66

CPC classification number: H01L29/66977 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L2027/11892 ,  H04N2209/045

Abstract: An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer above the photodiode, a dielectric region above the antireflection layer and an optical filter to pass incident luminous radiation having a given wavelength. The antireflection layer may include an array of pads mutually separated by a dielectric material of the dielectric region. The array may be configured to allow simultaneous transmission of the incident luminous radiation and a diffraction of the incident luminous radiation producing diffracted radiations which have wavelengths below that of the incident radiation, and are attenuated with respect to the incident radiation.

公开(公告)号：US10262898B2

公开(公告)日：2019-04-16

申请号：US15093416

申请日：2016-04-07

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Didier Dutartre ,  Jean-Pierre Carrere ,  Jean-Luc Huguenin ,  Clement Pribat ,  Sarah Kuster

IPC: H01L21/768 ,  H01L21/82 ,  H01L27/12 ,  H01L29/70 ,  H01L27/082 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/84 ,  H01L21/762 ,  H01L21/02

Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.

公开(公告)号：US20170221948A1

公开(公告)日：2017-08-03

申请号：US15489265

申请日：2017-04-17

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles 2) SAS

Inventor： Axel Crocherie ,  Michel Marty ,  Jean-Luc Huguenin ,  Sébastien Jouan

IPC: H01L27/146 ,  H01L29/66

CPC classification number: H01L29/66977 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L2027/11892 ,  H04N2209/045

Abstract: An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer disposed above the photodiode, a dielectric region disposed above the antireflection layer, an optical filter disposed above the dielectric region, and a diffraction grating disposed in the antireflection layer. The diffraction grating includes an array of pads.

公开(公告)号：US11562927B2

公开(公告)日：2023-01-24

申请号：US17228164

申请日：2021-04-12

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Didier Dutartre ,  Jean-Pierre Carrere ,  Jean-Luc Huguenin ,  Clement Pribat ,  Sarah Kuster

IPC: H01L21/768 ,  H01L21/82 ,  H01L21/84 ,  H01L21/762 ,  H01L21/74 ,  H01L21/02 ,  H01L29/06 ,  H01L27/12 ,  H01L21/8234

Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.

公开(公告)号：US09985119B2

公开(公告)日：2018-05-29

申请号：US15489265

申请日：2017-04-17

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles 2) SAS

Inventor： Axel Crocherie ,  Michel Marty ,  Jean-Luc Huguenin ,  Sébastien Jouan

IPC: H01L21/00 ,  H01L31/113 ,  H01L29/66 ,  H01L27/146

CPC classification number: H01L29/66977 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L2027/11892 ,  H04N2209/045

Abstract: An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer disposed above the photodiode, a dielectric region disposed above the antireflection layer, an optical filter disposed above the dielectric region, and a diffraction grating disposed in the antireflection layer. The diffraction grating includes an array of pads.