公开(公告)号：US20220082743A1

公开(公告)日：2022-03-17

申请号：US17469286

申请日：2021-09-08

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Olivier LE NEEL ,  Stephane ZOLL ,  Stephane MONFRAY

IPC: G02B5/28 ,  G02B5/18 ,  H01L31/0203 ,  H01L31/0216

Abstract: An optical filter includes a carrier layer made of a first material. A periodic grating of posts is disposed on the carrier layer in a periodic pattern configured by characteristic dimensions. The posts are made of a second material. A layer made of a third material encompasses the periodic grating of posts and covers the carrier layer. The third material has a refractive index that is different from a refractive index of the second material. Characteristic dimensions of the periodic grating of posts are smaller than an interfering wavelength and are configured to selectively reflect light at the interfering wavelength on the periodic grating of posts.

公开(公告)号：US20210172791A1

公开(公告)日：2021-06-10

申请号：US17116851

申请日：2020-12-09

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Olivier LE NEEL ,  Stephane MONFRAY

IPC: G01J1/04 ,  H01L27/144 ,  G02B5/20 ,  G01J1/44

Abstract: A light sensor includes a first pixel and a second pixel. Each pixel has a photoconversion area. A band-stop Fano resonance filter is arranged over the first pixel. The second pixel includes no Fano resonance filter. Signals output from the first and second pixels are processed to determine information representative of the quantity of light received by the light sensor during an illumination phase in a rejection band of the band-stop Fano resonance filter.

公开(公告)号：US20220160314A1

公开(公告)日：2022-05-26

申请号：US17529543

申请日：2021-11-18

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Gilles GASIOT ,  Severin TROCHUT ,  Olivier LE NEEL ,  Victor MALHERBE

IPC: A61B6/00 ,  G01T1/24

Abstract: An X-ray detector includes a first circuit with an NPN-type bipolar transistor and a second circuit configured to compare a voltage at a terminal of the NPN-type bipolar transistor with a reference value substantially equal to a value of the terminal voltage which would occur when the first circuit has been exposed to a threshold quantity of X-rays.

公开(公告)号：US20210088378A1

公开(公告)日：2021-03-25

申请号：US17024202

申请日：2020-09-17

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Stephane MONFRAY ,  Olivier LE NEEL ,  Frederic BOEUF

IPC: G01J1/04 ,  H01L31/0232 ,  H01L31/101 ,  G02B5/18 ,  G01J1/44

Abstract: A light sensor includes a semiconductor substrate supporting a number of pixels. Each pixel includes a photoconversion zone extending in the substrate between a front face and a back face of the substrate. An optical diffraction grating is arranged over the back face of the substrate at a position facing the photoconversion zone of the pixel. For at least two different pixels of the light sensor, the optical diffraction gratings have different pitches. Additionally, the optical grating of each pixel is surrounded by an opaque wall configured to absorb at operating wavelengths of the sensor.