公开(公告)号：US20150021668A1

公开(公告)日：2015-01-22

申请号：US14335565

申请日：2014-07-18

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Julien Michelot ,  Pascale Mazoyer

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14616 ,  H01L27/14689 ,  H01L27/14806

Abstract: An image sensor cell formed inside and on top of a substrate of a first conductivity type includes: a storage region of the second conductivity type; a read region of the second conductivity type; a transfer region located between the storage region and the read region; and a transfer gate topping the transfer region and which does not or does not totally top the storage region. The transfer region comprises a first area of the first conductivity type in the vicinity of the storage region, and a second area of the second conductivity type extending between the first area and the read region.

Abstract translation: 在第一导电类型的衬底内部和之上形成的图像传感器单元包括：第二导电类型的存储区域; 第二导电类型的读取区域; 位于所述存储区域和所述读取区域之间的传送区域; 以及转移栅极顶部转移区域，并且不会或不完全顶部存储区域。 传送区域包括在存储区域附近的第一导电类型的第一区域和在第一区域和读取区域之间延伸的第二导电类型的第二区域。