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    PHOTOSENSITIVE CELL OF AN IMAGE SENSOR
    4.
    发明申请
    PHOTOSENSITIVE CELL OF AN IMAGE SENSOR 审中-公开
    图像传感器的感光细胞

    公开(公告)号：US20150021668A1

    公开(公告)日：2015-01-22

    申请号：US14335565

    申请日：2014-07-18

    Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy ,  Julien Michelot ,  Pascale Mazoyer

    IPC: H01L27/146 ,  H01L27/148

    CPC classification number: H01L27/14616 ,  H01L27/14689 ,  H01L27/14806

    Abstract: An image sensor cell formed inside and on top of a substrate of a first conductivity type includes: a storage region of the second conductivity type; a read region of the second conductivity type; a transfer region located between the storage region and the read region; and a transfer gate topping the transfer region and which does not or does not totally top the storage region. The transfer region comprises a first area of the first conductivity type in the vicinity of the storage region, and a second area of the second conductivity type extending between the first area and the read region.

    Abstract translation: 在第一导电类型的衬底内部和之上形成的图像传感器单元包括：第二导电类型的存储区域; 第二导电类型的读取区域; 位于所述存储区域和所述读取区域之间的传送区域; 以及转移栅极顶部转移区域，并且不会或不完全顶部存储区域。 传送区域包括在存储区域附近的第一导电类型的第一区域和在第一区域和读取区域之间延伸的第二导电类型的第二区域。

    Low-noise wide dynamic range image sensor
    5.
    发明授权
    Low-noise wide dynamic range image sensor 有权

    公开(公告)号：US11195872B2

    公开(公告)日：2021-12-07

    申请号：US16547231

    申请日：2019-08-21

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy ,  Stephane Hulot ,  Andrej Suler ,  Nicolas Virollet

    IPC: H01L27/146

    Abstract: A semiconductor image sensor includes a plurality of pixels. Each pixel of the sensor includes a semiconductor substrate having opposite front and back sides and laterally delimited by a first insulating wall including a first conductive core insulated from the substrate, electron-hole pairs being capable of forming in the substrate due to a back-side illumination. A circuit is configured to maintain, during a first phase in a first operating mode, the first conductive core at a first potential and to maintain, during at least a portion of the first phase in a second operating mode, the first conductive core at a second potential different from the first potential.

    Single photon avalanche gate sensor device
    6.
    发明授权
    Single photon avalanche gate sensor device 有权

    公开(公告)号：US11145780B2

    公开(公告)日：2021-10-12

    申请号：US16789045

    申请日：2020-02-12

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy

    IPC: H01L31/113 ,  H01L31/0224 ,  H01L27/146

    Abstract: A semiconductor substrate doped with a first doping type is positioned adjacent an insulated gate electrode that is biased by a gate voltage. A first region within the semiconductor substrate is doped with the first doping type and biased with a bias voltage. A second region within the semiconductor substrate is doped with a second doping type that is opposite the first doping type. Voltage application produces an electrostatic field within the semiconductor substrate causing the formation of a fully depleted region within the semiconductor substrate. The fully depleted region responds to absorption of a photon with an avalanche multiplication that produces charges that are collected at the first and second regions.

    Insulating wall and method of manufacturing the same
    7.
    发明授权
    Insulating wall and method of manufacturing the same 有权

    公开(公告)号：US10361238B2

    公开(公告)日：2019-07-23

    申请号：US15703246

    申请日：2017-09-13

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy

    IPC: H01L27/146

    Abstract: A pixel includes a semiconductor layer with a charge accumulation layer extending in the semiconductor layer. A transistor has a read region penetrating into said semiconductor layer down to a first depth. An insulating wall penetrates into the semiconductor layer from an upper surface and containing an insulated conductor connected to a node of application of a potential. The insulating wall includes at least a portion provided with a deep insulating plug penetrating into the insulated conductor down to a second depth greater than the first depth. A continuous portion of the insulating wall laterally delimits, at least partially, a charge accumulation area and includes a wall portion with the deep insulating plug at least partially laterally delimiting the read region of the transistor.

    Single photon avalanche gate sensor device
    8.
    发明授权
    Single photon avalanche gate sensor device 有权

    公开(公告)号：US10193009B1

    公开(公告)日：2019-01-29

    申请号：US15945972

    申请日：2018-04-05

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy

    IPC: H01L31/113 ,  H01L31/0224 ,  H01L27/146

    Abstract: A semiconductor substrate doped with a first doping type is positioned adjacent an insulated gate electrode that is biased by a gate voltage. A first region within the semiconductor substrate is doped with the first doping type and biased with a bias voltage. A second region within the semiconductor substrate is doped with a second doping type that is opposite the first doping type. Voltage application produces an electrostatic field within the semiconductor substrate causing the formation of a fully depleted region within the semiconductor substrate. The fully depleted region responds to absorption of a photon with an avalanche multiplication that produces charges that are collected at the first and second regions.

    Time-of-flight detection pixel
    9.
    发明授权
    Time-of-flight detection pixel 有权

    公开(公告)号：US10162048B2

    公开(公告)日：2018-12-25

    申请号：US15392032

    申请日：2016-12-28

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy ,  Boris Rodrigues ,  Marie Guillon ,  Yvon Cazaux ,  Benoit Giffard

    IPC: G01S7/48 ,  H01L27/146 ,  H04N5/374 ,  G01S7/491 ,  G01S7/486

    Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.

    IMAGE SENSOR
    10.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20180323228A1

    公开(公告)日：2018-11-08

    申请号：US16031710

    申请日：2018-07-10

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy ,  Philippe Are

    IPC: H01L27/146 ,  H01L27/148

    CPC classification number: H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14812

    Abstract: An image sensor includes a control circuit and pixels. Each pixel includes: a photosensitive area, a substantially rectangular storage area adjacent to the photosensitive area, and a read area. First and second insulated vertical electrodes electrically connected to each other are positioned opposite each other and delimit the storage area. The first electrode extends between the storage area and the photosensitive area. The second electrode includes a bent extension opposite a first end of the first electrode, with the storage area emerging onto the photosensitive area on the side of the first end. The control circuit operates to apply a first voltage to the first and second electrodes to perform a charge transfer, and a second voltage to block charge transfer.

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