公开(公告)号：US20150021668A1

公开(公告)日：2015-01-22

申请号：US14335565

申请日：2014-07-18

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Julien Michelot ,  Pascale Mazoyer

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14616 ,  H01L27/14689 ,  H01L27/14806

Abstract: An image sensor cell formed inside and on top of a substrate of a first conductivity type includes: a storage region of the second conductivity type; a read region of the second conductivity type; a transfer region located between the storage region and the read region; and a transfer gate topping the transfer region and which does not or does not totally top the storage region. The transfer region comprises a first area of the first conductivity type in the vicinity of the storage region, and a second area of the second conductivity type extending between the first area and the read region.

Abstract translation: 在第一导电类型的衬底内部和之上形成的图像传感器单元包括：第二导电类型的存储区域; 第二导电类型的读取区域; 位于所述存储区域和所述读取区域之间的传送区域; 以及转移栅极顶部转移区域，并且不会或不完全顶部存储区域。 传送区域包括在存储区域附近的第一导电类型的第一区域和在第一区域和读取区域之间延伸的第二导电类型的第二区域。

公开(公告)号：US09099604B2

公开(公告)日：2015-08-04

申请号：US13858481

申请日：2013-04-08

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles 2) SAS

Inventor： François Roy ,  Lucile Broussous ,  Julien Michelot ,  Jean-Pierre Oddou

IPC: H01L21/00 ,  H01L31/18 ,  H01L27/146

CPC classification number: H01L31/18 ,  H01L27/14605

Abstract: A method for manufacturing an image sensor, including the successive steps of: forming columns of a semiconductor material; forming one or several pixels at a first end of each of the columns; and deforming the structure so that the second ends of each of the columns come closer to each other or draw away from each other to form a surface in the shape of a polyhedral cap.

Abstract translation: 一种用于制造图像传感器的方法，包括以下连续步骤：形成半导体材料的列; 在每个列的第一端形成一个或几个像素; 并且使结构变形使得每个柱的第二端彼此靠近或彼此拉开以形成多面体盖的形状的表面。

公开(公告)号：US20140004644A1

公开(公告)日：2014-01-02

申请号：US13858481

申请日：2013-04-08

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles 2) SAS

Inventor： François Roy ,  Lucile Broussous ,  Julien Michelot ,  Jean-Pierre Oddou

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L27/14605

Abstract: A method for manufacturing an image sensor, including the successive steps of: forming columns of a semiconductor material; forming one or several pixels at a first end of each of the columns; and deforming the structure so that the second ends of each of the columns come closer to each other or draw away from each other to form a surface in the shape of a polyhedral cap.

Abstract translation: 一种用于制造图像传感器的方法，包括以下连续步骤：形成半导体材料的列; 在每个列的第一端形成一个或几个像素; 并且使结构变形，使得每个柱的第二端彼此靠近或彼此拉开，以形成多面体盖的形状的表面。