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公开(公告)号：US20180320288A1
公开(公告)日：2018-11-08
申请号：US15773323
申请日：2016-11-01
申请人： SUMCO CORPORATION
摘要： A method of manufacturing a single crystal is provided with a raw material melting step of heating a silicon raw material in a quartz crucible using a carbon heater to generate a silicon melt; and a crystal pull-up step of pulling up a single crystal from the silicon melt generated by the raw material melting step, wherein the silicon raw material is heated with the maximum surface temperature of a first part of the heater that is positioned above at least the upper end of the quartz crucible maintained below 1500° C. in the raw material melting step.
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公开(公告)号：US20180187330A1
公开(公告)日：2018-07-05
申请号：US15741314
申请日：2016-07-06
申请人： SUMCO CORPORATION
发明人： Kaoru KAJIWARA , Yasuhiro SAITO , Takahiro KANEHARA , Tomokazu KATANO , Kazumi TANABE , Hideki TANAKA
摘要： A method for producing a plurality of silicon single crystals using a single quartz crucible by repeating a step of heating a silicon material charged in the quartz crucible within a chamber and a step of pulling a silicon single crystal from the silicon melt in the quartz crucible includes a first melting step of melting the silicon material fed to the quartz crucible used to pull a first silicon single crystal, and a second melting step of melting an additional amount of the silicon material fed to the quartz crucible used to pull the second and subsequent silicon single crystals. The interior of the chamber is set to be a first furnace pressure during the first melting step and then set to be a second furnace pressure higher than the first furnace pressure during the second melting step.
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