公开(公告)号：US20220090290A1

公开(公告)日：2022-03-24

申请号：US17413925

申请日：2019-12-16

申请人： SUMCO CORPORATION

发明人： Takeshi FUJITA ,  Ken KITAHARA ,  Tomokazu KATANO ,  Eriko KITAHARA

IPC分类号： C30B15/10 ,  C03C4/10 ,  C03C3/06 ,  C03B19/02

摘要： A quartz glass crucible 1 having a cylindrical side wall portion 10a, a bottom portion 10b, and a corner portion 10c connecting the side wall portion 10a and the bottom portion 10b to each other includes a transparent layer 11 made of quartz glass, and a bubble layer 12 made of quartz glass and formed outside the transparent layer 11. A ratio of an infrared transmittance of the corner portion 10c at a maximum thickness position of the corner portion 10c to an infrared transmittance of the side wall portion 10a is 0.3 or more and 0.99 or less, and an absolute value of a rate of change in infrared transmittance in a height direction along a wall surface of the crucible from a center of the bottom portion 10b toward an upper end of the side wall portion 10a is 3%/cm or less.

公开(公告)号：US20180187330A1

公开(公告)日：2018-07-05

申请号：US15741314

申请日：2016-07-06

申请人： SUMCO CORPORATION

发明人： Kaoru KAJIWARA ,  Yasuhiro SAITO ,  Takahiro KANEHARA ,  Tomokazu KATANO ,  Kazumi TANABE ,  Hideki TANAKA

IPC分类号： C30B15/20 ,  C30B29/06

CPC分类号： C30B15/20 ,  C30B29/06

摘要： A method for producing a plurality of silicon single crystals using a single quartz crucible by repeating a step of heating a silicon material charged in the quartz crucible within a chamber and a step of pulling a silicon single crystal from the silicon melt in the quartz crucible includes a first melting step of melting the silicon material fed to the quartz crucible used to pull a first silicon single crystal, and a second melting step of melting an additional amount of the silicon material fed to the quartz crucible used to pull the second and subsequent silicon single crystals. The interior of the chamber is set to be a first furnace pressure during the first melting step and then set to be a second furnace pressure higher than the first furnace pressure during the second melting step.

公开(公告)号：US20180108538A1

公开(公告)日：2018-04-19

申请号：US15564952

申请日：2016-04-21

申请人： SUMCO CORPORATION

发明人： Tomokazu KATANO

IPC分类号： H01L21/322 ,  C30B29/06 ,  C30B15/00 ,  C30B33/02 ,  C30B25/18 ,  H01L21/02 ,  H01L29/16 ,  H01L29/34 ,  B28D1/08

CPC分类号： H01L21/3225 ,  B28D1/08 ,  C30B15/00 ,  C30B15/203 ,  C30B25/18 ,  C30B29/06 ,  C30B33/02 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/16 ,  H01L29/34

摘要： A silicon single crystal is pulled up such that nitrogen concentration of the crystal is 1×1011 to 2×1013 atoms/cm3, the crystal cooling rate is about 4.2° C./min at a temperature of a silicon melting point to 1350° C. and is about 3.1° C./min at a temperature of 1200° C. to 1000° C., and oxygen concentration of a wafer is 9.5×1017 to 13.5×1017 atoms/cm3. After a heat treatment is performed on the wafer sliced from the silicon single crystal in a treatment condition of 875° C. for about 30 min, growth of an epitaxial layer is caused. Thus, an epitaxial wafer in which the number of epitaxial defects is not increased while maintaining predetermined oxygen concentration and slips do not occur is produced.

公开(公告)号：US20240183062A1

公开(公告)日：2024-06-06

申请号：US18443722

申请日：2024-02-16

申请人： SUMCO CORPORATION

发明人： Ken KITAHARA ,  Masanori FUKUI ,  Hiroshi KISHI ,  Tomokazu KATANO ,  Eriko KITAHARA

IPC分类号： C30B15/10 ,  C03B19/09 ,  C03B20/00 ,  C03C19/00 ,  C30B29/06 ,  F27B14/10 ,  G01N21/3563 ,  G01N33/38

CPC分类号： C30B15/10 ,  C03B20/00 ,  C03C19/00 ,  C30B29/06 ,  F27B14/10 ,  G01N21/3563 ,  G01N33/386 ,  C03B19/095

摘要： An infrared transmissivity measurement method is for measuring an infrared transmissivity of a quartz glass crucible which includes a transparent layer made of quartz glass that does not contain bubbles, a bubble layer formed outside the transparent layer and made of quartz glass containing bubbles, and a semi-molten layer formed outside the bubble layer and made of raw material silica powder solidified in a semi-molten state. The infrared transmissivity measurement method includes processing an outer surface of the quartz glass crucible formed by the semi-molten layer to lower a surface roughness of the outer surface; and measuring an infrared transmissivity of the quartz glass crucible based on infrared light passing through the outer surface after processing the outer surface.

公开(公告)号：US20220090291A1

公开(公告)日：2022-03-24

申请号：US17413929

申请日：2019-12-16

申请人： SUMCO CORPORATION

发明人： Ken KITAHARA ,  Masanori FUKUI ,  Hiroshi KISHI ,  Tomokazu KATANO ,  Eriko KITAHARA

IPC分类号： C30B15/10 ,  C30B29/06 ,  C03B20/00 ,  C03C19/00 ,  G01N21/3563 ,  G01N33/38 ,  F27B14/10

摘要： A quartz glass crucible 1 having a cylindrical side wall portion 10a, a bottom portion 10b, and a corner portion 10c includes a transparent layer 11 as an innermost layer made of quartz glass, a semi-molten layer 13 as an outermost layer made of raw material silica powder solidified in a semi-molten state, and a bubble layer 12 made of quartz glass interposed therebetween. An infrared transmissivity of the corner portion 10c in a state where the semi-molten layer 13 is removed is 25 to 51%, the infrared transmissivity of the corner portion 10c in the state where the semi-molten layer 13 is removed is lower than an infrared transmissivity of the side wall portion 10a, and the infrared transmissivity of the side wall portion 10a in the state where the semi-molten layer 13 is removed is lower than an infrared transmissivity of the bottom portion 10b.

公开(公告)号：US20180197751A1

公开(公告)日：2018-07-12

申请号：US15399981

申请日：2017-01-06

申请人： SUMCO CORPORATION

发明人： Yasuo KOIKE ,  Tomokazu KATANO ,  Toshiaki ONO

IPC分类号： H01L21/322 ,  H01L29/16 ,  H01L29/32 ,  H01L29/36 ,  H01L21/02 ,  C30B29/06 ,  C30B29/64

CPC分类号： H01L21/3225 ,  C30B15/203 ,  C30B15/206 ,  C30B29/06 ,  C30B33/02 ,  H01L21/02532 ,  H01L21/02584 ,  H01L29/16 ,  H01L29/32 ,  H01L29/365

摘要： An epitaxial silicon wafer includes a silicon wafer consisting of a COP region in which a nitrogen concentration is 1×108−3×109 atoms/cm3, and an epitaxial silicon film formed on the silicon wafer. When heat treatment for evaluation is applied, a density of BMD formed inside the silicon wafer is 1×108−3×109 atoms/cm3 over the entire radial direction of the silicon wafer. An average density of the BMD formed in an outer peripheral region of the silicon wafer which is a 1-10 mm range separated inward from an outermost periphery thereof is lower than the average density of the BMD formed in a center region. A variation in the BMD density in the outer peripheral region is 3 or less, and a residual oxygen concentration in the outer peripheral region is 8×1017 atoms/cm3 or more.