公开(公告)号：US20210098259A1

公开(公告)日：2021-04-01

申请号：US16954811

申请日：2018-10-22

申请人： SUMCO CORPORATION

发明人： Yasuhiro SAITO

IPC分类号： H01L21/304 ,  B28D5/04

摘要： A method for manufacturing an ingot block in which an ingot of a silicon single crystal pulled up by a Czochralski process is cut and subjected to outer periphery grinding to manufacture an ingot block of the silicon single crystal, the method including: a step of measuring a radial center position of the ingot at one or more locations along a longitudinal direction of the ingot, a step of setting a reference position at which an offset amount of the measured radial center position of the ingot is equal to or less than a predetermined eccentricity amount, a step of cutting the ingot into the ingot blocks based on the set reference position, and a step of performing outer periphery grinding on each of the cut ingot blocks.

公开(公告)号：US20180187330A1

公开(公告)日：2018-07-05

申请号：US15741314

申请日：2016-07-06

申请人： SUMCO CORPORATION

发明人： Kaoru KAJIWARA ,  Yasuhiro SAITO ,  Takahiro KANEHARA ,  Tomokazu KATANO ,  Kazumi TANABE ,  Hideki TANAKA

IPC分类号： C30B15/20 ,  C30B29/06

CPC分类号： C30B15/20 ,  C30B29/06

摘要： A method for producing a plurality of silicon single crystals using a single quartz crucible by repeating a step of heating a silicon material charged in the quartz crucible within a chamber and a step of pulling a silicon single crystal from the silicon melt in the quartz crucible includes a first melting step of melting the silicon material fed to the quartz crucible used to pull a first silicon single crystal, and a second melting step of melting an additional amount of the silicon material fed to the quartz crucible used to pull the second and subsequent silicon single crystals. The interior of the chamber is set to be a first furnace pressure during the first melting step and then set to be a second furnace pressure higher than the first furnace pressure during the second melting step.