公开(公告)号：US12047695B2

公开(公告)日：2024-07-23

申请号：US17914095

申请日：2020-05-15

Applicant: SUN YAT-SEN UNIVERSITY

Inventor： Kai Wang ,  Yihong Qi

IPC: H04N25/57 ,  H01L27/146

CPC classification number: H04N25/57 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643

Abstract: Provided is a photoelectric sensor, a random accessible active pixel circuit, an image sensor and a camera. A photoelectric sensor comprises a doped region, a substrate, a doped source region, a doped drain region, and two isolation regions; wherein the doped region is arranged on a bottom surface of the substrate so as to form a photodiode; a cathode of the photodiode is formed in the doped region and is connected to a positive voltage to make the photodiode work in a reverse bias region; wherein the doped source region and the doped drain region are spaced apart on top of the substrate so as to form a field effect transistor; a source is formed on a top surface of the doped source region, and a drain is formed on the top surface of the doped drain region; wherein the two isolation regions are arranged on opposite sides of the substrate, and extend from the doped source region and the doped drain region to the doped region; wherein a gate dielectric layer and a gate between the doped source region and the doped drain region are configured sequentially upwards from the top surface of the substrate; the gate is connected to a voltage to make the field effect transistor select wide dynamic range mode or high gain mode.