公开(公告)号：US5877551A

公开(公告)日：1999-03-02

申请号：US752193

申请日：1996-11-18

申请人： Salvador A. Tostado ,  George A. Brathwaite ,  Paul R. Hoffman ,  George A. Erfe ,  Serafin P. Pedron, Jr. ,  Michael A. Raftery ,  Kambhampati Ramakrishna ,  German J. Ramirez ,  Linda E. Strauman

发明人： Salvador A. Tostado ,  George A. Brathwaite ,  Paul R. Hoffman ,  George A. Erfe ,  Serafin P. Pedron, Jr. ,  Michael A. Raftery ,  Kambhampati Ramakrishna ,  German J. Ramirez ,  Linda E. Strauman

IPC分类号： H01L21/48 ,  H01L23/14 ,  H01L23/053 ,  H01L23/04

CPC分类号： H01L23/142 ,  H01L21/4846 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/3011

摘要： A semiconductor package is provided that has a rigid metal substrate and a dielectric layer covering a first portion of the rigid metal substrate, with a second portion of the rigid metal substrate being substantially free of the dielectric layer. A semiconductor device is electrically bonded to the second portion of the rigid metal substrate and metal circuit traces defining electrical paths are formed on the dielectric layer, at least one of which contacts the rigid metal substrate through at least one via in the dielectric layer. Additionally, a method is provided for grounding a semiconductor device and at least one circuit trace on a rigid metal substrate substantially covered by a dielectric layer, which includes creating at least one via in the dielectric layer using a laser and creating circuit traces on the dielectric layer, at least one of which contacts the rigid metal substrate through at least one of the vias. The semiconductor is electrically bonded to the rigid metal substrate in an aperture in the dielectric layer.

摘要翻译： 提供一种半导体封装，其具有刚性金属基底和覆盖刚性金属基底的第一部分的电介质层，刚性金属基底的第二部分基本上不含介电层。 半导体器件电连接到刚性金属衬底的第二部分，并且在电介质层上形成限定电路径的金属电路迹线，其中的至少一个通过介电层中的至少一个通孔与刚性金属衬底接触。 此外，提供了一种用于使半导体器件接地的方法和基本上被介电层覆盖的刚性金属衬底上的至少一个电路迹线，其包括使用激光在电介质层中形成至少一个通孔，并在电介质上产生电路迹线 层，其中的至少一个通过至少一个通孔与刚性金属衬底接触。 半导体在电介质层的孔中与刚性金属基板电连接。