公开(公告)号：US08598008B2

公开(公告)日：2013-12-03

申请号：US13277939

申请日：2011-10-20

申请人： Sameer P. Pendharkar ,  Marie Denison ,  Yongxi Zhang

发明人： Sameer P. Pendharkar ,  Marie Denison ,  Yongxi Zhang

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L27/082 ,  H01L21/8222 ,  H01L27/0259 ,  H01L27/0823 ,  H01L29/735

摘要： An integrated circuit containing a stacked bipolar transistor which includes two bipolar transistors connected in series is disclosed. Each bipolar transistor includes a breakdown inducing feature. The breakdown inducing features have reflection symmetry with respect to each other. A process for forming an integrated circuit containing a stacked bipolar transistor which includes two bipolar transistors connected in series, with breakdown inducing features having reflection symmetry, is also disclosed.

摘要翻译： 公开了一种包含串联连接的两个双极晶体管的叠层双极晶体管的集成电路。 每个双极晶体管包括击穿诱导特征。 击穿诱发特征相对于彼此具有反射对称性。 还公开了一种用于形成集成电路的方法，该集成电路包括具有串联连接的两个双极晶体管和具有反射对称性的击穿诱发特征的堆叠双极晶体管。

公开(公告)号：US20120098098A1

公开(公告)日：2012-04-26

申请号：US13277939

申请日：2011-10-20

申请人： Sameer P. Pendharkar ,  Marie Denison ,  Yongxi Zhang

发明人： Sameer P. Pendharkar ,  Marie Denison ,  Yongxi Zhang

IPC分类号： H01L27/082 ,  H01L21/8222

CPC分类号： H01L27/082 ,  H01L21/8222 ,  H01L27/0259 ,  H01L27/0823 ,  H01L29/735

摘要： An integrated circuit containing a stacked bipolar transistor which includes two bipolar transistors connected in series is disclosed. Each bipolar transistor includes a breakdown inducing feature. The breakdown inducing features have reflection symmetry with respect to each other. A process for forming an integrated circuit containing a stacked bipolar transistor which includes two bipolar transistors connected in series, with breakdown inducing features having reflection symmetry, is also disclosed.

摘要翻译： 公开了一种包含串联连接的两个双极晶体管的叠层双极晶体管的集成电路。 每个双极晶体管包括击穿诱导特征。 击穿诱发特征相对于彼此具有反射对称性。 还公开了一种用于形成集成电路的方法，该集成电路包括具有串联连接的两个双极晶体管和具有反射对称性的击穿诱发特征的堆叠双极晶体管。