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公开(公告)号:US20240215339A1
公开(公告)日:2024-06-27
申请号:US18455666
申请日:2023-08-25
Applicant: Samsung Display Co., LTD.
Inventor: KOICHI SUGITANI , GWUI-HYUN PARK , HOKYUNG JANG , SAEHEE HAN
IPC: H10K59/124 , H10K59/12 , H10K59/123 , H10K59/131
CPC classification number: H10K59/124 , H10K59/1201 , H10K59/123 , H10K59/131 , H10K71/621
Abstract: A display device includes a light emitting area and a non-light emitting area adjacent to the light emitting area, a first conductive layer disposed on a substrate in the light emitting area and the non-light emitting area, a second conductive layer disposed on the first conductive layer in the light emitting area, a first insulating film disposed on the first conductive layer, overlapping the first conductive layer and the second conductive layer in the light emitting area, and having a first permittivity, and a second insulating film disposed between the first insulating film and the second conductive layer, disposed in the light emitting area and the non-light emitting area, overlapping the first insulating film and the first conductive layer, and having a second permittivity greater than the first permittivity.
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公开(公告)号:US20230096077A1
公开(公告)日:2023-03-30
申请号:US17867443
申请日:2022-07-18
Applicant: Samsung Display Co., Ltd. , LTC Co., Ltd
Inventor: Jun Young KIM , GWUI-HYUN PARK , KOICHI SUGITANI , HYE IN KIM , Do Hyuk IM , SAEHEE HAN , PIL SOON HONG , Hwa Young KIM , Do Hyun SEO , Ho Sung CHOI , Sung Goo HAN
Abstract: A photosensitive resin composition including a silsesquioxane-based copolymer obtained by copolymerizing a first monomer represented by Chemical Formula 1 (R1—R2—Si (R3)3), a second monomer represented by Chemical Formula 2 ((R4)n—Si(R5)4-n), a third monomer represented by Chemical Formula 3 (Si(R6)4), and a fourth monomer represented by Chemical Formula 4 ((R7)3—Si—R8—Si—(R7)3) are provided.
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公开(公告)号:US20240215416A1
公开(公告)日:2024-06-27
申请号:US18390505
申请日:2023-12-20
Applicant: Samsung Display Co., LTD.
Inventor: GWUI-HYUN PARK , KOICHI SUGITANI , HOKYUNG JANG , SAEHEE HAN
CPC classification number: H10K59/8792 , H10K71/233
Abstract: A display device includes a substrate including a light emitting area and a non-light emitting area disposed adjacent to the light emitting area, a light emitting element disposed in the light emitting area on the substrate, a plurality of light blocking patterns disposed above the light emitting element and spaced apart from each other, and a transmission pattern disposed on the light emitting element, surrounding the plurality of light blocking patterns, and including a first organic pattern and a second organic pattern disposed on the first organic pattern.
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公开(公告)号:US20220115489A1
公开(公告)日:2022-04-14
申请号:US17356937
申请日:2021-06-24
Applicant: Samsung Display Co., Ltd.
Inventor: GWUI-HYUN PARK , KOICHI SUGITANI , HYE IN KIM , CHULWON PARK , PIL SOON HONG
IPC: H01L27/32
Abstract: A display device includes a first light emitting element in a first display area, a first pixel circuit in a first non-display area spaced from the first display area and connected to the first light emitting element, an insulating layer covering the first pixel circuit, a metal wiring on the insulating layer, connected to the first pixel circuit, and extending from the first non-display area to a second non-display area between the first display area and the first non-display area, and a transparent wiring on the insulating layer, connecting the first light emitting element and the metal wiring, and extending from the first display area to a surface of the metal wiring, where a trench is defined in a surface of the insulating layer in the second non-display area, and the metal wiring is in the trench in the second non-display area.
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公开(公告)号:US20180190832A1
公开(公告)日:2018-07-05
申请号:US15716641
申请日:2017-09-27
Applicant: Samsung Display Co., Ltd.
Inventor: PIL SOON HONG , HYUNYOUNG JUNG , CHULWON PARK , GWUI-HYUN PARK , JEONGMIN PARK
IPC: H01L29/786 , H01L29/66
Abstract: A display apparatus includes a thin film transistor on a first base substrate, the thin film transistor including a gate electrode disposed on the first base substrate, an active pattern disposed on the first base substrate and including a semiconductor layer including of amorphous silicon and an ohmic contact layer which is on the semiconductor layer, a drain electrode disposed on the ohmic contact layer and having a first thickness, and a source electrode disposed on the ohmic contact layer and having a second thickness which is greater than the first thickness.
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