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公开(公告)号:US20230197006A1
公开(公告)日:2023-06-22
申请号:US18110971
申请日:2023-02-17
Applicant: Samsung Display Co., Ltd.
Inventor: Juwon YOON , IIjeong LEE , Jiseon LEE , Choongyoul IM
IPC: G09G3/3233 , H01L27/12 , H10K59/121
CPC classification number: G09G3/3233 , H01L27/124 , H01L27/1222 , H10K59/1213 , G09G2300/0819 , G09G2300/0861 , G09G2310/0251 , G09G2310/0262 , H10K59/131
Abstract: An organic light-emitting display apparatus including an organic light-emitting diode emitting visible light, a driving thin film transistor driving the organic light-emitting diode, and a compensation thin film transistor. The compensation thin film transistor includes a compensation gate electrode, a compensation semiconductor layer, a compensation source electrode, and a compensation drain electrode. The compensation gate electrode includes a first gate electrode, and a second gate electrode electrically connected to the first gate electrode. The compensation drain electrode is electrically connected to the driving gate electrode of the driving thin film transistor. The compensation semiconductor layer includes a first semiconductor region overlapping the first gate electrode and a second semiconductor region overlapping the second gate electrode and disposed further from the compensation drain electrode than the first semiconductor region, and an area of the first semiconductor region is different than an area of the second semiconductor region.
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公开(公告)号:US20240296794A1
公开(公告)日:2024-09-05
申请号:US18658590
申请日:2024-05-08
Applicant: Samsung Display Co., LTD.
Inventor: Juwon YOON , IIjeong LEE , Jiseon LEE , Choongyoul IM
IPC: G09G3/3233 , H01L27/12 , H10K59/121 , H10K59/131
CPC classification number: G09G3/3233 , H01L27/1222 , H01L27/124 , H10K59/1213 , G09G2300/0819 , G09G2300/0861 , G09G2310/0251 , G09G2310/0262 , H10K59/1216 , H10K59/131
Abstract: An organic light-emitting display apparatus including an organic light-emitting diode emitting visible light, a driving thin film transistor driving the organic light-emitting diode, and a compensation thin film transistor. The compensation thin film transistor includes a compensation gate electrode, a compensation semiconductor layer, a compensation source electrode, and a compensation drain electrode. The compensation gate electrode includes a first gate electrode, and a second gate electrode electrically connected to the first gate electrode. The compensation drain electrode is electrically connected to the driving gate electrode of the driving thin film transistor. The compensation semiconductor layer includes a first semiconductor region overlapping the first gate electrode and a second semiconductor region overlapping the second gate electrode and disposed further from the compensation drain electrode than the first semiconductor region, and an area of the first semiconductor region is different than an area of the second semiconductor region.
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