公开(公告)号：US20170179441A1

公开(公告)日：2017-06-22

申请号：US15375203

申请日：2016-12-12

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Seung-Min LEE ,  Tae-Hyun KIM ,  Jung-Kyu LEE ,  Sang-Ho PARK ,  Joo-Sun YOON

IPC: H01L51/52 ,  H01L27/32

CPC classification number: H01L51/5293 ,  H01L27/3246 ,  H01L27/326 ,  H01L27/3262 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/5268

Abstract: A transparent display device according to example embodiments includes a substrate having a pixel area and a transmission area, a pixel circuit on the pixel area of the substrate, an insulation structure on the substrate to cover the pixel circuit, a first electrode on the pixel area of the substrate, the first electrode being at least partially penetrated the insulation structure and electrically connected to the pixel circuit, a display layer on the first electrode, a second electrode facing the first electrode and covering the display layer, and an anti-diffraction layer on the substrate, the anti-diffraction layer at least partially overlapping the transmission area and including a plurality of nano wires.

公开(公告)号：US20150155391A1

公开(公告)日：2015-06-04

申请号：US14558937

申请日：2014-12-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jung-Kyu LEE ,  Do-Hyun KWON ,  Min-Jung LEE ,  Sung-Eun LEE ,  Moo-Soon KO

IPC: H01L29/786 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/78675 ,  H01L29/1033 ,  H01L29/66757 ,  H01L29/78627 ,  H01L29/78696

Abstract: A thin film transistor (TFT) includes a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode. The semiconductor active layer includes a first doped region as a source region, a second doped region as a drain region, an undoped region between the first and second doped regions. A third doped region is disposed between the second doped region and the undoped region. The gate electrode is insulated from the semiconductor active layer and overlaps the third doped region and the undoped region. The source electrode and the drain electrode are connected to the first and second doped regions.

Abstract translation: 薄膜晶体管（TFT）包括半导体有源层，栅电极，源电极和漏电极。 半导体有源层包括作为源极区域的第一掺杂区域，作为漏极区域的第二掺杂区域，第一和第二掺杂区域之间的未掺杂区域。 第三掺杂区域设置在第二掺杂区域和未掺杂区域之间。 栅电极与半导体有源层绝缘，并与第三掺杂区和未掺杂区重叠。 源电极和漏电极连接到第一和第二掺杂区域。

公开(公告)号：US20160027856A1

公开(公告)日：2016-01-28

申请号：US14877044

申请日：2015-10-07

Applicant: Samsung Display Co., Ltd.

Inventor： Do-Hyun KWON ,  Min-Jung LEE ,  Sung-Eun LEE ,  Il-Jeong LEE ,  Jung-Kyu LEE ,  Kwang-Young CHOI

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2227/323

Abstract: A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.

公开(公告)号：US20220231258A1

公开(公告)日：2022-07-21

申请号：US17595762

申请日：2019-11-18

Applicant: Samsung Display Co., LTD.

Inventor： Seung-Hwan CHO ,  Jong-Hyun CHOI ,  Seung-Lyong BOK ,  Jung-Kyu LEE ,  Young-Cheol JEONG

IPC: H01L51/52 ,  H01L27/32

Abstract: A display device includes a first display area, a second display area and a non-display area between the first display area and the second display area and extending in a first direction, at least a portion of the non-display area having a bending area connecting the first display area to the second display area, the display device comprising: light-emitting elements on a base substrate in the first display area and in the second display area; a first encapsulation layer covering light-emitting elements in the first display area; a second encapsulation layer covering light-emitting elements in the second display area; a signal wiring crossing the non-display area and extending in a second direction; and an upper compensation layer in the non-display area and filling a gap between the first encapsulation layer and the second encapsulation layer.

公开(公告)号：US20210359058A1

公开(公告)日：2021-11-18

申请号：US17262624

申请日：2019-06-25

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Hwan CHO ,  Jong-Hyun CHOI ,  Ju-Chan PARK ,  Joo-Sun YOON ,  Jung-Kyu LEE

IPC: H01L27/32

Abstract: An organic light emitting display device includes: a substrate having a sub-pixel circuit region including a driving transistor region; an active pattern in the sub-pixel circuit region on the substrate, and including a bent portion having a first length in the driving transistor region, and a straight portion adjacent to the bent portion in the driving transistor region and having a second length shorter than the first length in the driving transistor region; and a sub-pixel structure on the active pattern. Accordingly, when the organic light emitting display device is driven at a low gray level, the organic light emitting display device can improve the low gray-level spot and the crosstalk while relatively reducing the power consumption.

公开(公告)号：US20150034912A1

公开(公告)日：2015-02-05

申请号：US14156624

申请日：2014-01-16

Applicant: Samsung Display Co., LTD.

Inventor： Do-Hyun KWON ,  Min-Jung LEE ,  Sung-Eun LEE ,  Il-Jeong LEE ,  Jung-Kyu LEE ,  Kwang-Young CHOI

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32

CPC classification number: H01L27/3262 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2227/323

Abstract: A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.

Abstract translation: 薄膜晶体管基板包括在基底基板上的半导体图形，设置在半导体图案上的第一绝缘构件，设置在第一绝缘构件上的第二绝缘图案，以及设置在第一绝缘构件和第二绝缘图案上的栅电极 。 第二绝缘图案与半导体图案的第一端部重叠，并且暴露出与第一端部部分相反的半导体图案的第二端部。 栅电极与第一绝缘构件和第二绝缘图案重叠。