公开(公告)号：US20160027856A1

公开(公告)日：2016-01-28

申请号：US14877044

申请日：2015-10-07

Applicant: Samsung Display Co., Ltd.

Inventor： Do-Hyun KWON ,  Min-Jung LEE ,  Sung-Eun LEE ,  Il-Jeong LEE ,  Jung-Kyu LEE ,  Kwang-Young CHOI

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2227/323

Abstract: A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.

公开(公告)号：US20150034912A1

公开(公告)日：2015-02-05

申请号：US14156624

申请日：2014-01-16

Applicant: Samsung Display Co., LTD.

Inventor： Do-Hyun KWON ,  Min-Jung LEE ,  Sung-Eun LEE ,  Il-Jeong LEE ,  Jung-Kyu LEE ,  Kwang-Young CHOI

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32

CPC classification number: H01L27/3262 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2227/323

Abstract: A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.

Abstract translation: 薄膜晶体管基板包括在基底基板上的半导体图形，设置在半导体图案上的第一绝缘构件，设置在第一绝缘构件上的第二绝缘图案，以及设置在第一绝缘构件和第二绝缘图案上的栅电极 。 第二绝缘图案与半导体图案的第一端部重叠，并且暴露出与第一端部部分相反的半导体图案的第二端部。 栅电极与第一绝缘构件和第二绝缘图案重叠。

公开(公告)号：US20150155391A1

公开(公告)日：2015-06-04

申请号：US14558937

申请日：2014-12-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jung-Kyu LEE ,  Do-Hyun KWON ,  Min-Jung LEE ,  Sung-Eun LEE ,  Moo-Soon KO

IPC: H01L29/786 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/78675 ,  H01L29/1033 ,  H01L29/66757 ,  H01L29/78627 ,  H01L29/78696

Abstract: A thin film transistor (TFT) includes a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode. The semiconductor active layer includes a first doped region as a source region, a second doped region as a drain region, an undoped region between the first and second doped regions. A third doped region is disposed between the second doped region and the undoped region. The gate electrode is insulated from the semiconductor active layer and overlaps the third doped region and the undoped region. The source electrode and the drain electrode are connected to the first and second doped regions.

Abstract translation: 薄膜晶体管（TFT）包括半导体有源层，栅电极，源电极和漏电极。 半导体有源层包括作为源极区域的第一掺杂区域，作为漏极区域的第二掺杂区域，第一和第二掺杂区域之间的未掺杂区域。 第三掺杂区域设置在第二掺杂区域和未掺杂区域之间。 栅电极与半导体有源层绝缘，并与第三掺杂区和未掺杂区重叠。 源电极和漏电极连接到第一和第二掺杂区域。

公开(公告)号：US20180122880A1

公开(公告)日：2018-05-03

申请号：US15713983

申请日：2017-09-25

Applicant: Samsung Display Co., Ltd.

Inventor： Sung-Eun LEE ,  Jin-Taek KIM ,  Ki-Wan AHN ,  Joo-Sun YOON ,  Yong-Jae JANG ,  Kwang-Young CHOI

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/3233 ,  G09G3/3291

CPC classification number: H01L27/3258 ,  G09G3/3233 ,  G09G3/3291 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3265

Abstract: A display substrate includes a data line extending in a first direction, a first transistor including a first channel area overlapping the data line and a first control electrode which overlaps the first channel area and has a substantially same shape as that of the first channel area in an overlap area in which the first control electrode overlaps the first channel area, a scan line extending in a second direction crossing the first direction, a first voltage line extending in the first direction and transfers a first driving signal, a first capacitor including an extension electrode which overlaps the first control electrode and extends in the second direction from the first voltage line and a second capacitor including an overlap electrode overlapping the data line.