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公开(公告)号：US20210167153A1
公开(公告)日：2021-06-03
申请号：US17151883
申请日：2021-01-19
发明人： Myoung Geun CHA , Sang Gun CHOI , Sang Sub KIM , Ji Yeong SHIN , Yong Su LEE , Ki Seok CHOI
IPC分类号： H01L27/32
摘要： An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.
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公开(公告)号：US20240304726A1
公开(公告)日：2024-09-12
申请号：US18665023
申请日：2024-05-15
发明人： Sang Sub KIM , Keun Woo KIM , Ji Yeong SHIN , Yong Su LEE , Myoung Geun CHA , Ki Seok CHOI , Sang Gun CHOI
IPC分类号： H01L29/786 , G09G3/32 , H01L21/225 , H01L21/265 , H01L21/28 , H01L27/12 , H01L29/66 , H10K59/12 , H10K59/121
CPC分类号： H01L29/78603 , H01L27/1274 , H01L29/6675 , H10K59/1213 , G09G3/32 , G09G2300/0809 , H01L21/2253 , H01L21/26533 , H01L21/28158 , H01L27/1255 , H10K59/1201
摘要： A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.
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公开(公告)号：US20230223478A1
公开(公告)日：2023-07-13
申请号：US18122815
申请日：2023-03-17
发明人： Sang Sub KIM , Keun Woo KIM , Ji Yeong SHIN , Yong Su LEE , Myoung Geun CHA , Ki Seok CHOI , Sang Gun CHOI
CPC分类号： H10K59/1201 , H01L29/6675 , H10K59/1213
摘要： A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.
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公开(公告)号：US20240206246A1
公开(公告)日：2024-06-20
申请号：US18236319
申请日：2023-08-21
发明人： Hee Kyun SHIN , Yong Hoon YANG , Myoung Geun CHA , Ki Seok CHOI
IPC分类号： H10K59/126 , C08G73/10 , C08J5/18
CPC分类号： H10K59/126 , C08G73/1007 , C08G73/1064 , C08G73/1071 , C08J5/18 , C08J2379/08
摘要： A display device including a first substrate and a second substrate. A first barrier layer is on the first substrate and the second substrate is on the first barrier layer. A second barrier layer is on the second substrate and a buffer layer is on the second barrier layer. At least one transistor is on the buffer layer and an organic light-emitting diode is on the at least one transistor. The second substrate comprises a polyimide resin and a dielectric constant of the second substrate is smaller than a dielectric constant of the first substrate.
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公开(公告)号：US20230022035A1
公开(公告)日：2023-01-26
申请号：US17683848
申请日：2022-03-01
发明人： Myoung Geun CHA , Sang Gun CHOI , Hye Na KWAK , Yun Jung OH , Ki Seok CHOI
摘要： A display device including: a substrate including a main area and a sub-area at a side of the main area; a thin-film transistor on the substrate and positioned in the main area; a first insulating layer on a gate electrode of the thin-film transistor; a light-emitting element on the first insulating layer, positioned in the main area, and electrically connected to the thin-film transistor; a plurality of pads on the first insulating layer and positioned in the sub-area; and a light-blocking layer overlapping the plurality of pads and located between the substrate and the first insulating layer.
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公开(公告)号：US20210151475A1
公开(公告)日：2021-05-20
申请号：US17071579
申请日：2020-10-15
发明人： Sang Sub KIM , Keun Woo KIM , Ji Yeong SHIN , Yong Su LEE , Myoung Geun CHA , Ki Seok CHOI , Sang Gun CHOI
IPC分类号： H01L27/12 , H01L27/32 , G09G3/32 , H01L21/265 , H01L21/225 , H01L21/28
摘要： A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.
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