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公开(公告)号：US20190326560A1
公开(公告)日：2019-10-24
申请号：US16203784
申请日：2018-11-29
发明人： Myoung Geun CHA , Sang Gun CHOI , Joon Woo BAE , Ji Yeong SHIN , Yong Su LEE
IPC分类号： H01L51/56 , H01L27/32 , H01L51/52 , H01L21/308
摘要： A method for manufacturing a display device including forming a lower electrode on a substrate; depositing a first insulation layer thereon; forming a semiconductor layer that overlaps the lower electrode thereon; depositing a second insulation layer thereon; forming a gate electrode and an etching prevention layer that overlap the semiconductor layer thereon; depositing a third insulation layer thereon; forming a first conductor that overlaps the gate electrode thereon; depositing a fourth insulation layer thereon; forming a photosensitive film patterns thereon by depositing a photosensitive film and exposing and developing the photosensitive film such that portions of the photosensitive film are removed in a first area, a second area, and a third area; etching the third insulation layer using the patterns as an etching mask; etching the etching prevention layer by using the patterns as an etching mask; and etching the first insulation layer using the patterns as an etching mask.
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公开(公告)号：US20240169918A1
公开(公告)日：2024-05-23
申请号：US18448817
申请日：2023-08-11
发明人： Keun Woo KIM , Hye Na KWAK , Chan Yeob SEOL , Bum Mo SUNG , Ji Yeong SHIN
IPC分类号： G09G3/3233 , G09G3/3291
CPC分类号： G09G3/3233 , G09G3/3291
摘要： A display device includes: a light emitting element on a substrate; a third-first transistor and a third-second transistor connected in series between a gate electrode of the first transistor and a drain electrode of the first transistor; a first metal layer on the substrate and comprising a gate electrode of the third-first transistor and a gate electrode of the third-second transistor; a hydrogen passivation layer on the first metal layer; a semiconductor region of each of a first transistor, the third-first transistor, and the third-second transistor on the hydrogen passivation layer; a gate electrode on the capping layer; a first bias electrode on a same layer as the gate electrode of the first transistor and overlapping the semiconductor region of the third-first transistor; and a second bias electrode on a same layer as the first bias electrode and overlapping the semiconductor region of the third-second transistor.
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公开(公告)号：US20210167153A1
公开(公告)日：2021-06-03
申请号：US17151883
申请日：2021-01-19
发明人： Myoung Geun CHA , Sang Gun CHOI , Sang Sub KIM , Ji Yeong SHIN , Yong Su LEE , Ki Seok CHOI
IPC分类号： H01L27/32
摘要： An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.
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公开(公告)号：US20240172499A1
公开(公告)日：2024-05-23
申请号：US18424535
申请日：2024-01-26
发明人： Myoung Geun CHA , Sang Gun CHOI , Ji Yeong SHIN , Yong Su LEE
IPC分类号： H10K59/131 , G09G3/32 , H10K59/123 , H10K77/10
CPC分类号： H10K59/131 , G09G3/32 , H10K59/123 , H10K77/111 , G09G2300/0426 , G09G2300/0809 , G09G2320/02 , H10K2102/311
摘要： A display device includes a substrate including a display area including a plurality of pixels, a peripheral area around the display area, and a bending area disposed in the peripheral area. A plurality of transistors is disposed in each pixel; a driving voltage line is disposed in the display area and transmits a driving voltage; a driving voltage transmission line is disposed in the peripheral area and is connected to the driving voltage line; and a conductive overlap layer overlaps at least one of the plurality of transistors.
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公开(公告)号：US20210151475A1
公开(公告)日：2021-05-20
申请号：US17071579
申请日：2020-10-15
发明人： Sang Sub KIM , Keun Woo KIM , Ji Yeong SHIN , Yong Su LEE , Myoung Geun CHA , Ki Seok CHOI , Sang Gun CHOI
IPC分类号： H01L27/12 , H01L27/32 , G09G3/32 , H01L21/265 , H01L21/225 , H01L21/28
摘要： A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.
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公开(公告)号：US20240304726A1
公开(公告)日：2024-09-12
申请号：US18665023
申请日：2024-05-15
发明人： Sang Sub KIM , Keun Woo KIM , Ji Yeong SHIN , Yong Su LEE , Myoung Geun CHA , Ki Seok CHOI , Sang Gun CHOI
IPC分类号： H01L29/786 , G09G3/32 , H01L21/225 , H01L21/265 , H01L21/28 , H01L27/12 , H01L29/66 , H10K59/12 , H10K59/121
CPC分类号： H01L29/78603 , H01L27/1274 , H01L29/6675 , H10K59/1213 , G09G3/32 , G09G2300/0809 , H01L21/2253 , H01L21/26533 , H01L21/28158 , H01L27/1255 , H10K59/1201
摘要： A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.
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公开(公告)号：US20230223478A1
公开(公告)日：2023-07-13
申请号：US18122815
申请日：2023-03-17
发明人： Sang Sub KIM , Keun Woo KIM , Ji Yeong SHIN , Yong Su LEE , Myoung Geun CHA , Ki Seok CHOI , Sang Gun CHOI
CPC分类号： H10K59/1201 , H01L29/6675 , H10K59/1213
摘要： A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.
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公开(公告)号：US20230068662A1
公开(公告)日：2023-03-02
申请号：US17982721
申请日：2022-11-08
发明人： Myoung Geun CHA , Sang Gun CHOI , Joon Woo BAE , Ji Yeong SHIN , Yong Su LEE
IPC分类号： H01L51/56 , H01L27/32 , H01L21/308 , H01L51/52
摘要： A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.
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公开(公告)号：US20210036268A1
公开(公告)日：2021-02-04
申请号：US17075872
申请日：2020-10-21
发明人： Myoung Geun CHA , Sang Gun CHOI , Joon Woo BAE , Ji Yeong SHIN , Yong Su LEE
IPC分类号： H01L51/56 , H01L27/32 , H01L21/308 , H01L51/52
摘要： A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.
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