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公开(公告)号:US20240206280A1
公开(公告)日:2024-06-20
申请号:US18520126
申请日:2023-11-27
发明人: Seung Hun KIM , Jeong Seok LEE , WOOCHEOL PARK , Seung Yong SONG , Hee Jun YANG , Kwan Hyuck YOON , CHANGHEE LEE
IPC分类号: H10K59/80 , H10K59/12 , H10K59/123
CPC分类号: H10K59/80523 , H10K59/1201 , H10K59/123
摘要: The present disclosure relates to a display device and a method for manufacturing the same. A display device, according to an embodiment, includes: a substrate; a thin film transistor on the substrate; a first electrode connected to the thin film transistor; a light emitting layer on the first electrode; and a second electrode on the light emitting layer. The second electrode includes a metal material and a graphene material that are mixed.
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公开(公告)号:US20230133488A1
公开(公告)日:2023-05-04
申请号:US17962013
申请日:2022-10-07
发明人: Jin Ho HYUN , Kwan Hyuck YOON , Hye Min LEE
摘要: A display device includes a substrate including a display area and a non-display area surrounding the display area, a plurality of pixels on the substrate in the display area, a first encapsulation layer on the substrate to cover the pixels and including an inorganic material, a second encapsulation layer on the first encapsulation layer and including an organic material, and a third encapsulation layer on the second encapsulation layer and including an inorganic material. An edge of the second encapsulation layer is located in the non-display area, edges of the first encapsulation layer and the third encapsulation layer are located more to an outside than the edge of the second encapsulation layer is. The first encapsulation layer includes a first area and a second area located more to the outside than the first area and having a surface roughness smaller than a surface roughness of the first area.
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公开(公告)号:US20230043912A1
公开(公告)日:2023-02-09
申请号:US17719684
申请日:2022-04-13
发明人: Jeong Seok LEE , Oh June KWON , Kwan Hyuck YOON , Hye Kyun LEE
摘要: The present disclosure relates to a display device, and a display device according to an embodiment includes a substrate, a transistor disposed on the substrate, a light emitting element connected to the transistor, an encapsulation layer disposed on the light emitting element, a sensing electrode disposed on the encapsulation layer, a first insulating layer disposed on the sensing electrode and including an opening, a second insulating layer disposed on the first insulating layer, and a third insulating layer disposed on the second insulating layer, wherein a refractive index of the third insulating layer is higher than that of the second insulating layer.
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公开(公告)号:US20230157103A1
公开(公告)日:2023-05-18
申请号:US17944313
申请日:2022-09-14
发明人: Jeong Seok LEE , Woo Cheol PARK , Kwan Hyuck YOON , Hye Kyun LEE
CPC分类号: H01L27/3276 , H01L51/5256 , H01L51/5275 , H01L27/323
摘要: A display device includes: a substrate including a first display area, a second display area including a light-transmitting part, and a third display area between the first and second display areas; a first subpixel including a first TFT on the first display area and a first light-emitting element on and electrically connected to the first TFT; a second subpixel including a second TFT on the third display area and a second light-emitting element, which is on the second display area and does not overlap with the second TFT in a plan view; a thin-film encapsulation layer on the first and second subpixels,; and a first transparent conductive layer between the second TFT and the second light-emitting element to electrically connect the second TFT and the second light-emitting element. The thin-film encapsulation layer has a refractive index of about 1.5 to about 1.7.
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公开(公告)号:US20230143994A1
公开(公告)日:2023-05-11
申请号:US17856464
申请日:2022-07-01
发明人: Soo Youn KIM , Seung Hun KIM , Seung Yong SONG , Hee Jun YANG , Kwan Hyuck YOON , Seung Ho YOON , Moon Won CHANG , Se Hoon JEONG
IPC分类号: H01L27/32
CPC分类号: H01L27/3276 , H01L27/3293 , H01L2227/323
摘要: A display device includes a first substrate including a first contact hole, fan-out lines in a first metal layer, a second substrate on the first metal layer and including a second contact hole, connection lines in a second metal layer and into the second contact hole connected to the fan-out lines, a thin film transistor in an active layer and a third metal layer on the second metal layer, and a flexible film on a surface of the first substrate and into the first contact hole connected to the fan-out lines. An etching angle of the first contact hole between a top surface of the first substrate and an inner surface of the first contact hole is less than an etching angle of the second contact hole between top surfaces of the fan-out lines and an inner surface of the second contact hole.
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