Abstract:
The present disclosure relates to a display device and a method for manufacturing the same. A display device, according to an embodiment, includes: a substrate; a thin film transistor on the substrate; a first electrode connected to the thin film transistor; a light emitting layer on the first electrode; and a second electrode on the light emitting layer. The second electrode includes a metal material and a graphene material that are mixed.
Abstract:
A display device includes a first substrate including a first contact hole, fan-out lines in a first metal layer, a second substrate on the first metal layer and including a second contact hole, connection lines in a second metal layer and into the second contact hole connected to the fan-out lines, a thin film transistor in an active layer and a third metal layer on the second metal layer, and a flexible film on a surface of the first substrate and into the first contact hole connected to the fan-out lines. An etching angle of the first contact hole between a top surface of the first substrate and an inner surface of the first contact hole is less than an etching angle of the second contact hole between top surfaces of the fan-out lines and an inner surface of the second contact hole.
Abstract:
A display device including a substrate having a display area including a plurality of pixels and a peripheral area positioned outside the display area, a sealant in the peripheral area, a first spacer on the sealant, an encapsulation substrate on the first spacer, and a touch sensor on the encapsulation substrate facing the display area.
Abstract:
A touch screen panel includes first electrode patterns disposed in a first direction, first connection patterns electrically connecting the first electrode patterns, second electrode patterns disposed in a second direction intersecting the first direction and insulated from the first electrode patterns, insulating patterns disposed on the first connection patterns, and second connection patterns disposed on the insulating patterns and electrically connecting the second electrode patterns, in which at least one of the first electrode patterns, the first connection patterns, the second electrode patterns, and the second connection patterns include a first polymer layer including a conductive material infiltrated therein, and the insulating patterns comprise a second polymer layer comprising a dielectric material infiltrated therein.
Abstract:
An organic thin film transistor and a method of manufacturing the same, the transistor including a gate electrode; an organic semiconductor layer overlapping the gate electrode; and an insulating layer between the gate electrode and the organic semiconductor layer, the insulating layer having an organic/inorganic hybrid region, wherein the organic/inorganic hybrid region includes a polymer and an inorganic material that is chemically bonded to the polymer through a reactive group on the polymer, and the insulating layer includes a space adjacent to the polymer, the inorganic material being positioned in the space.