摘要:
An organic light emitting diode display including: a substrate; an organic light emitting diode on the substrate; a capping layer on the organic light emitting diode and including a high refractive layer including an inorganic material having a refractive index that is equal to or greater than about 1.7 and equal to or less than about 6.0; and a thin film encapsulation layer covering the capping layer and the organic light emitting diode, the inorganic material including at least one selected from the group consisting of CuI, thallium iodide (TlI), BaS, Cu2O, CuO, BiI, WO3, TiO2, AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MoO3, Ag2O, CdO, CoO, Pr2O3, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.
摘要:
An organic light emitting diode (OLED) display according to the present disclosure includes a substrate, a thin film transistor on the substrate, a first electrode on the thin film transistor and electrically coupled to the thin film transistor, an organic emission layer on the first electrode, a second electrode on the organic emission layer, and a capping layer on the second electrode, wherein a thickness of the second electrode is about 65 Å to about 125 Å, and wherein a thickness of the capping layer is about (500*1.88/n) Å to about (700*1.88/n) Å, n being an optical constant of the capping layer.
摘要:
An organic light emitting element according to an example embodiment of the present disclosure includes: an anode and a cathode facing each other; an emission layer between the anode and the cathode; an electron transfer layer between the emission layer and the cathode; and a buffer layer between the cathode and the electron transfer layer, wherein the buffer layer includes an inorganic metal halide having p-type semiconductor characteristics.
摘要:
An organic light emitting display is provided. The organic light emitting display includes a first base substrate; a plurality of organic light emitting diodes disposed on the first base substrate; an encapsulation layer disposed on the organic light emitting diodes; and a plurality of first color conversion filters disposed on the encapsulation layer. The encapsulation layer includes: a first sub-inorganic layer disposed on the organic light emitting diodes; a second sub-inorganic layer disposed on the first sub-inorganic layer and having a refractive index different from that of the first sub-inorganic layer; an organic layer disposed on the second sub-inorganic layer; and a third sub-inorganic layer disposed on the organic layer.
摘要:
A display device includes a first substrate; light-emitting elements disposed on the first substrate; an encapsulation film covering the light-emitting elements; a second substrate facing the first substrate; a first outermost film disposed on the second substrate to face the encapsulation film and including AOXNY (where A is a metal or non-metal element and X>Y); and a filler material disposed between the encapsulation film and the first outermost film and placed in direct contact with the first outermost film.
摘要:
A display device is provided. The display device includes a plurality of pixels; a first base; an organic light emitting element on the first base and in each of the pixels; a second base facing the first base; and a filling pattern layer between the organic light emitting elements and the second base, the filling pattern layer including a first pattern portion and a second pattern portion alternately arranged along a same direction in a plan view, wherein the first pattern portion is in each of the pixels, the second pattern portion is at a boundary of each of the pixels and contacts the first pattern portion, and a refractive index of the second pattern portion is smaller than that of the first pattern portion.
摘要:
A light-emitting diode includes a first electrode, a second electrode overlapping the first electrode, a first emission layer and a second emission layer provided between the first electrode and the second electrode, and a first charge generating layer provided between the first emission layer and the second emission layer, the first charge generating layer including a p-type charge generating layer and an n-type charge generating layer. The n-type charge generating layer may include an organic material and an inorganic material doped to the organic material, and the inorganic material may include a lanthanide metal or an alkali earth metal, and an alkali halide.
摘要:
A light emitting diode including a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; and an electron transporting region positioned between the second electrode and the emission layer, wherein the electron transporting region includes a tellurium compound of a rare earth metal.
摘要:
An organic light emitting diode display includes: a substrate; an organic light emitting element on the substrate; and a capping layer on the organic light emitting element and including a high refraction layer formed of an inorganic material having a refractive index which is equal to or greater than about 1.7 and equal to or less than about 6.0, wherein the inorganic material includes at least one selected from CuI, thallium iodide (TlI), AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MnI2, FeI2, CoI2, NiI2, aluminum iodide (AlI3), thorium (IV) iodide (ThI4), uranium triiodide (UI3), MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, CuO, Cu2O, WO3, MoO3, SnO2, Nb2O5, Ag2O, CdO, CoO, Pr2O3, Bi2O3, Fe2O3, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.
摘要:
An organic light emitting element according to an exemplary embodiment of the present disclosure includes a first electrode, a second electrode, an emission layer between the first electrode and the second electrode, an electron injection layer between the second electrode and the emission layer, and a barrier layer between the electron injection layer and the second electrode, wherein a work function of the barrier layer is larger than a work function of the second electrode.