Thin film transistor array panel
    1.
    发明授权
    Thin film transistor array panel 有权
    薄膜晶体管阵列面板

    公开(公告)号:US08766268B2

    公开(公告)日:2014-07-01

    申请号:US13957264

    申请日:2013-08-01

    IPC分类号: H01L27/088 H01L29/786

    摘要: A thin film transistor (TFT) array panel includes: first and second pixel electrodes neighboring each other; a data line extending between the first and the second pixel electrodes; first and second gate lines extending perpendicularly to the data line; a first TFT including a first gate electrode connected to the first gate line, a first source electrode connected to the data line, and a first drain electrode facing the first source electrode and connected to the first pixel electrode; and a second TFT including a second gate electrode connected to the second gate line, a second source electrode connected to the data line, and a second drain electrode facing the second source electrode and connected to the second pixel electrode. The first source electrode has the same relative position with respect to the first drain electrode as the second source electrode with respect to the second drain electrode.

    摘要翻译: 薄膜晶体管(TFT)阵列面板包括:彼此相邻的第一和第二像素电极; 在第一和第二像素电极之间延伸的数据线; 第一和第二栅极线垂直于数据线延伸; 第一TFT,包括连接到第一栅极线的第一栅极电极,连接到数据线的第一源电极和面对第一源极并连接到第一像素电极的第一漏电极; 以及第二TFT,包括连接到第二栅极线的第二栅电极,连接到数据线的第二源电极和面对第二源电极并连接到第二像素电极的第二漏电极。 第一源电极相对于作为第二源极的第一漏电极相对于第二漏电极具有相同的相对位置。

    Thin film transistor array panel
    3.
    发明授权
    Thin film transistor array panel 有权
    薄膜晶体管阵列面板

    公开(公告)号:US09099358B2

    公开(公告)日:2015-08-04

    申请号:US14281762

    申请日:2014-05-19

    摘要: A thin film transistor (TFT) array panel includes: first and second pixel electrodes neighboring each other; a data line extending between the first and the second pixel electrodes; first and second gate lines extending perpendicularly to the data line; a first TFT including a first gate electrode connected to the first gate line, a first source electrode connected to the data line, and a first drain electrode facing the first source electrode and connected to the first pixel electrode; and a second TFT including a second gate electrode connected to the second gate line, a second source electrode connected to the data line, and a second drain electrode facing the second source electrode and connected to the second pixel electrode. The first source electrode has the same relative position with respect to the first drain electrode as the second source electrode with respect to the second drain electrode.

    摘要翻译: 薄膜晶体管(TFT)阵列面板包括:彼此相邻的第一和第二像素电极; 在第一和第二像素电极之间延伸的数据线; 第一和第二栅极线垂直于数据线延伸; 第一TFT,包括连接到第一栅极线的第一栅极电极,连接到数据线的第一源电极和面对第一源极并连接到第一像素电极的第一漏电极; 以及第二TFT,包括连接到第二栅极线的第二栅电极,连接到数据线的第二源电极和面对第二源电极并连接到第二像素电极的第二漏电极。 第一源电极相对于作为第二源极的第一漏电极相对于第二漏电极具有相同的相对位置。

    TOUCH SCREEN PANEL AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    TOUCH SCREEN PANEL AND METHOD OF MANUFACTURING THE SAME 审中-公开
    触摸屏面板及其制造方法

    公开(公告)号:US20150177862A1

    公开(公告)日:2015-06-25

    申请号:US14637339

    申请日:2015-03-03

    IPC分类号: G06F3/041

    摘要: Provided are a touch screen panel and a method of manufacturing the same. The touch screen panel comprises: a substrate; a first reflection-preventing film formed on the substrate; a first gate wiring formed on the first reflection-preventing film; and a sensing wiring formed above the first gate wiring to be insulated from the first gate wiring and to cross the first gate wiring.

    摘要翻译: 提供一种触摸屏面板及其制造方法。 触摸屏面板包括:基板; 形成在基板上的第一防反射膜; 形成在第一防反射膜上的第一栅极布线; 以及形成在所述第一栅极布线上方以与所述第一栅极布线绝缘并跨过所述第一栅极布线的感测布线。

    Thin film transistor array substrate for a display panel and a method for manufacturing a thin film transistor array substrate for a display panel
    5.
    发明授权
    Thin film transistor array substrate for a display panel and a method for manufacturing a thin film transistor array substrate for a display panel 有权
    用于显示面板的薄膜晶体管阵列基板和用于制造用于显示面板的薄膜晶体管阵列基板的方法

    公开(公告)号:US08652886B2

    公开(公告)日:2014-02-18

    申请号:US13870053

    申请日:2013-04-25

    IPC分类号: H01L21/00

    摘要: A method of manufacturing a thin film transistor array substrate includes forming a gate pattern on a substrate, forming a gate insulating film on the substrate, forming a source/drain pattern and a semiconductor pattern on the substrate, forming first, second, and third passivation films successively on the substrate. Over the above multi-layered passivation film forming a first photoresist pattern including a first portion formed on part of the drain electrode and on the pixel region, and a second portion. The second portion is thicker than the first portion. Then, patterning the third passivation film using the first photoresist pattern, forming a second photoresist pattern by removing the first portion of the first photoresist pattern, forming a transparent electrode film on the substrate, removing the second photoresist pattern and the transparent electrode film disposed on the second photoresist pattern, and forming a transparent electrode pattern on the second passivation layer.

    摘要翻译: 制造薄膜晶体管阵列基板的方法包括在基板上形成栅极图案,在基板上形成栅极绝缘膜,在基板上形成源/漏图案和半导体图案,形成第一,第二和第三钝化层 胶片依次在基材上。 在上述多层钝化膜上形成包括形成在漏电极的一部分上和在像素区域上的第一部分的第一光致抗蚀剂图案和第二部分。 第二部分比第一部分厚。 然后,使用第一光致抗蚀剂图案图案化第三钝化膜,通过去除第一光致抗蚀剂图案的第一部分形成第二光致抗蚀剂图案,在基板上形成透明电极膜,去除设置在第一光致抗蚀剂图案上的第二光致抗蚀剂图案和透明电极膜 第二光致抗蚀剂图案,并且在第二钝化层上形成透明电极图案。