Abstract:
A display device including: a substrate including first and second sides which face and are parallel to each other, and third and fourth sides which are orthogonal to the first and second sides, and face each other; a gate driver and a data driver disposed along the first side of the substrate; a first diagonal gate line, which is extended in a first direction crossing directions in which the first to fourth sides are extended, and has both ends heading the second and fourth sides of the substrate; a gate pad part extended from one end of the first diagonal gate line adjacent to the second side; an insulation layer including an opening for exposing at least a partial area of the gate pad part and formed on the substrate; a redundancy line extended in a second direction parallel to a direction in which the third and fourth sides are extended, and connected to the gate driver; and a redundancy pad part extended from the redundancy line to be in direct contact with the gate pad part exposed through the opening.
Abstract:
A method of manufacturing a thin film transistor array substrate includes forming a gate pattern on a substrate, forming a gate insulating film on the substrate, forming a source/drain pattern and a semiconductor pattern on the substrate, forming first, second, and third passivation films successively on the substrate. Over the above multi-layered passivation film forming a first photoresist pattern including a first portion formed on part of the drain electrode and on the pixel region, and a second portion. The second portion is thicker than the first portion. Then, patterning the third passivation film using the first photoresist pattern, forming a second photoresist pattern by removing the first portion of the first photoresist pattern, forming a transparent electrode film on the substrate, removing the second photoresist pattern and the transparent electrode film disposed on the second photoresist pattern, and forming a transparent electrode pattern on the second passivation layer.
Abstract:
A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.
Abstract:
A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.
Abstract:
A display device including: a substrate including first and second sides which face and are parallel to each other, and third and fourth sides which are orthogonal to the first and second sides, and face each other; a gate driver and a data driver disposed along the first side of the substrate; a first diagonal gate line, which is extended in a first direction crossing directions in which the first to fourth sides are extended, and has both ends heading the second and fourth sides of the substrate; a gate pad part extended from one end of the first diagonal gate line adjacent to the second side; an insulation layer including an opening for exposing at least a partial area of the gate pad part and formed on the substrate; a redundancy line extended in a second direction parallel to a direction in which the third and fourth sides are extended, and connected to the gate driver; and a redundancy pad part extended from the redundancy line to be in direct contact with the gate pad part exposed through the opening.