公开(公告)号：US20170207343A1

公开(公告)日：2017-07-20

申请号：US15480102

申请日：2017-04-05

Applicant: Samsung Display Co., Ltd.

Inventor： Seung Ho JUNG ,  Chaun Gi CHOI ,  Hye Young PARK ,  Eun Young LEE ,  Joo Hee JEON ,  Eun Jeong CHO ,  Bo Geon JEON ,  Yung Bin CHUNG

IPC: H01L29/786 ,  H01L29/78 ,  H01L27/12

CPC classification number: H01L29/78603 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/7849 ,  H01L29/78633 ,  H01L29/7869 ,  H01L51/0097 ,  H01L51/5256 ,  H01L2251/5338 ,  H01L2251/55 ,  Y02E10/549

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

公开(公告)号：US20160322602A1

公开(公告)日：2016-11-03

申请号：US15045688

申请日：2016-02-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Seung Ho JUNG ,  Chaun Gi CHOI ,  Hye Young PARK ,  Eun Young LEE ,  Joo Hee JEON ,  Eun Jeong CHO ,  Bo Geon JEON ,  Yung Bin CHUNG

IPC: H01L51/52 ,  H01L51/00

CPC classification number: H01L29/78603 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/7849 ,  H01L29/78633 ,  H01L29/7869 ,  H01L51/0097 ,  H01L51/5256 ,  H01L2251/5338 ,  H01L2251/55 ,  Y02E10/549

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

Abstract translation: 薄膜晶体管阵列面板装置包括：基底; 阻挡层，设置在所述基底基板上并且包括多个透明材料层; 以及设置在阻挡层上的薄膜晶体管阵列。 阻挡层的折射率与基底的折射率之差可以在约6％以内。 透明材料层可以布置成使得具有压缩残余应力的透明材料层和具有拉伸残余应力的透明材料层交替堆叠。 每个透明材料层可以包括氮氧化硅（SiON）。