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公开(公告)号:US20210036069A1
公开(公告)日:2021-02-04
申请号:US16831461
申请日:2020-03-26
Applicant: Samsung Display Co., Ltd.
Inventor: Seung Hwa HA , Seung Ho JUNG
Abstract: A display device includes a display module. An impact absorption layer is disposed under the display module and includes a first opening exposing a lower surface of the display module. A rigid plate is disposed under the impact absorption layer. A sensor is disposed between the display module and the rigid plate within the first opening and is coupled to a lower surface of the rigid plate. A support member is disposed between the impact absorption layer and the sensor within the first opening, and contacts the display module and the rigid plate.
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公开(公告)号:US20200022267A1
公开(公告)日:2020-01-16
申请号:US16381372
申请日:2019-04-11
Applicant: Samsung Display Co. Ltd.
Inventor: Ji Won HAN , Jai Ku SHIN , Seung Ho JUNG , Tae Hyeog JUNG , Kyung Min CHOI , Won Baek LEE
Abstract: A display device includes a flexible module including a display panel displaying an image, a first adhesive film disposed on one surface of the flexible module, first and second support plates disposed on the first adhesive film, opposed to the flexible module, and spaced apart from each other, a first adhesive protection layer and a first anti-adhesive layer disposed between the first support plate and the first adhesive film and facing each other, and a second adhesive protection layer and a second anti-adhesive layer disposed between the second support plate and the first adhesive film and facing each other, where a first bonding force between the first anti-adhesive layer and the first support plate and a second bonding force between the first adhesive protection layer and the first adhesive film are larger than a third bonding force between the first adhesive protection layer and the first anti-adhesive layer.
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公开(公告)号:US20190326442A1
公开(公告)日:2019-10-24
申请号:US16451593
申请日:2019-06-25
Applicant: SAMSUNG DISPLAY CO, LTD.
Inventor: Seung Ho JUNG , Chaun Gi Choi , Hye Young Park , Eun Young Lee , Joo Hee Jeon , Eun Jeong Cho , Bo Geon Jeon , Yung Bin Chung
IPC: H01L29/786 , H01L51/00 , H01L27/12 , H01L29/78 , H01L51/52
Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).
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公开(公告)号:US20160322602A1
公开(公告)日:2016-11-03
申请号:US15045688
申请日:2016-02-17
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Seung Ho JUNG , Chaun Gi CHOI , Hye Young PARK , Eun Young LEE , Joo Hee JEON , Eun Jeong CHO , Bo Geon JEON , Yung Bin CHUNG
CPC classification number: H01L29/78603 , H01L27/1218 , H01L27/1225 , H01L27/3244 , H01L27/3262 , H01L29/7849 , H01L29/78633 , H01L29/7869 , H01L51/0097 , H01L51/5256 , H01L2251/5338 , H01L2251/55 , Y02E10/549
Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).
Abstract translation: 薄膜晶体管阵列面板装置包括:基底; 阻挡层,设置在所述基底基板上并且包括多个透明材料层; 以及设置在阻挡层上的薄膜晶体管阵列。 阻挡层的折射率与基底的折射率之差可以在约6%以内。 透明材料层可以布置成使得具有压缩残余应力的透明材料层和具有拉伸残余应力的透明材料层交替堆叠。 每个透明材料层可以包括氮氧化硅(SiON)。
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公开(公告)号:US20210328175A1
公开(公告)日:2021-10-21
申请号:US17146395
申请日:2021-01-11
Applicant: Samsung Display Co., Ltd.
Inventor: Seung Hwa HA , Seung Ho JUNG , In Woo JEONG
IPC: H01L51/52
Abstract: A display device includes: a display panel having an upper surface to display an image and a lower surface; a first support and a second support disposed on the lower surface of the display panel; a first hinge connecting a side of the first support and a side of the second support and defining a first axis; a cover disposed on another side of the second support; and a second hinge connecting another side of the second support and a side of the cover and defining a second axis substantially parallel to the first axis, wherein the cover comprises a transparent material and a recess disposed on the side connected to the second hinge member.
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公开(公告)号:US20170207343A1
公开(公告)日:2017-07-20
申请号:US15480102
申请日:2017-04-05
Applicant: Samsung Display Co., Ltd.
Inventor: Seung Ho JUNG , Chaun Gi CHOI , Hye Young PARK , Eun Young LEE , Joo Hee JEON , Eun Jeong CHO , Bo Geon JEON , Yung Bin CHUNG
IPC: H01L29/786 , H01L29/78 , H01L27/12
CPC classification number: H01L29/78603 , H01L27/1218 , H01L27/1225 , H01L27/3244 , H01L27/3262 , H01L29/7849 , H01L29/78633 , H01L29/7869 , H01L51/0097 , H01L51/5256 , H01L2251/5338 , H01L2251/55 , Y02E10/549
Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).
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