公开(公告)号：US12127435B2

公开(公告)日：2024-10-22

申请号：US18140530

申请日：2023-04-27

Applicant: Samsung Display Co., Ltd.

Inventor： Jae Bum Han ,  Moon Sung Kim ,  Young Gil Park ,  Soo Im Jeong

IPC: H01L29/08 ,  H10K59/121 ,  H10K59/40 ,  G09G3/3233 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H10K59/12

CPC classification number: H10K59/1213 ,  H10K59/40 ,  G09G3/3233 ,  G09G2300/0426 ,  H01L27/1222 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/78675 ,  H10K59/1201

Abstract: A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

公开(公告)号：US11672146B2

公开(公告)日：2023-06-06

申请号：US17373602

申请日：2021-07-12

Applicant: Samsung Display Co., Ltd.

Inventor： Jae Bum Han ,  Moon Sung Kim ,  Young Gil Park ,  Soo Im Jeong

IPC: H01L29/08 ,  H01L27/32 ,  G09G3/3233 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/3262 ,  H01L27/323 ,  G09G3/3233 ,  G09G2300/0426 ,  H01L27/1222 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2227/323

Abstract: A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.