公开(公告)号：US09406807B2

公开(公告)日：2016-08-02

申请号：US14290788

申请日：2014-05-29

Applicant: Samsung Display Co., Ltd.

Inventor： Joo-Han Kim ,  Hwa-Dong Jung ,  Wan-Soon Lim ,  Jee-Hun Lim ,  Joo Seok Yeom ,  Tae-Kyung Yim ,  Jae-Hak Lee ,  Hyuk Soon Kwon ,  Hyoung Cheol Lee ,  Jeong-Ju Park ,  Se-Myung Kwon ,  So-Young Koo

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78663 ,  H01L27/1222 ,  H01L27/1285

Abstract: Exemplary embodiments of the invention disclose a method of manufacturing a thin film transistor array panel having reduced overall processing time and providing a uniform crystallization. Exemplary embodiments of the invention also disclose a crystallization method of a thin film transistor, including forming on a substrate a semiconductor layer including a first pixel area, a second pixel area, and a third pixel area. The crystallization method includes crystallizing a portion of the semiconductor layer corresponding to a channel region of a thin film transistor using a micro lens array.

Abstract translation: 本发明的示例性实施例公开了一种制造薄膜晶体管阵列面板的方法，其具有缩短的总体处理时间并提供均匀的结晶。 本发明的示例性实施例还公开了一种薄膜晶体管的结晶方法，包括在基板上形成包括第一像素区域，第二像素区域和第三像素区域的半导体层。 结晶方法包括使用微透镜阵列结晶对应于薄膜晶体管的沟道区的半导体层的一部分。

公开(公告)号：US20140264350A1

公开(公告)日：2014-09-18

申请号：US14290788

申请日：2014-05-29

Applicant: Samsung Display Co., Ltd.

Inventor： Joo-Han KIM ,  Hwa-Dong Jung ,  Wan-Soon Lim ,  Jee-Hun Lim ,  Joo Seok Yeom ,  Tae-Kyung Yim ,  Jae-Hak Lee ,  Hyuk Soon Kwon ,  Hyoung Cheol Lee ,  Jeong-Ju Park ,  Se-Myung Kwon ,  So-Young Koo

IPC: H01L29/786

CPC classification number: H01L29/78663 ,  H01L27/1222 ,  H01L27/1285

Abstract: Exemplary embodiments of the invention disclose a method of manufacturing a thin film transistor array panel having reduced overall processing time and providing a uniform crystallization. Exemplary embodiments of the invention also disclose a crystallization method of a thin film transistor, including forming on a substrate a semiconductor layer including a first pixel area, a second pixel area, and a third pixel area. The crystallization method includes crystallizing a portion of the semiconductor layer corresponding to a channel region of a thin film transistor using a micro lens array.

Abstract translation: 本发明的示例性实施例公开了一种制造薄膜晶体管阵列面板的方法，其具有缩短的总体处理时间并提供均匀的结晶。 本发明的示例性实施例还公开了一种薄膜晶体管的结晶方法，包括在基板上形成包括第一像素区域，第二像素区域和第三像素区域的半导体层。 结晶方法包括使用微透镜阵列结晶对应于薄膜晶体管的沟道区的半导体层的一部分。