公开(公告)号：US11855104B2

公开(公告)日：2023-12-26

申请号：US17099629

申请日：2020-11-16

Applicant: Samsung Display Co., Ltd.

Inventor： Youngin Hwang ,  Elly Gil ,  Sungho Kim ,  Eungtaek Kim ,  Yongho Yang ,  Seongmin Wang ,  Jina Lee ,  Joohyeon Jo ,  Seongbaik Chu

IPC: H01L27/14 ,  H01L27/12 ,  G09G3/3225 ,  H10K59/131 ,  H10K59/121

CPC classification number: H01L27/1255 ,  G09G3/3225 ,  H01L27/124 ,  H01L27/1222 ,  H10K59/1213 ,  H10K59/1216 ,  H10K59/131

Abstract: A display device includes: a first electrode layer; a semiconductor layer including a source region, a drain region, and a channel region, wherein at least a portion of the source region or the drain region overlaps the first electrode layer; a second electrode layer arranged adjacent to the channel region; a third electrode layer overlapping the second electrode layer and at least a portion of the source region or the drain region; and a power line electrically connected to the first electrode layer and the third electrode layer.

公开(公告)号：US20240079419A1

公开(公告)日：2024-03-07

申请号：US18388594

申请日：2023-11-10

Applicant: Samsung Display Co., Ltd.

Inventor： Youngin HWANG ,  Elly Gil ,  Sungho Kim ,  Eungtaek Kim ,  Yongho Yang ,  Seongmin Wang ,  Jina Lee ,  Joohyeon Jo ,  Seongbaik Chu

IPC: H01L27/12 ,  G09G3/3225 ,  H10K59/121 ,  H10K59/131

CPC classification number: H01L27/1255 ,  G09G3/3225 ,  H01L27/1222 ,  H01L27/124 ,  H10K59/1213 ,  H10K59/1216 ,  H10K59/131

Abstract: A display device includes: a first electrode layer; a semiconductor layer including a source region, a drain region, and a channel region, wherein at least a portion of the source region or the drain region overlaps the first electrode layer; a second electrode layer arranged adjacent to the channel region; a third electrode layer overlapping the second electrode layer and at least a portion of the source region or the drain region; and a power line electrically connected to the first electrode layer and the third electrode layer.

公开(公告)号：US20160190164A1

公开(公告)日：2016-06-30

申请号：US14864451

申请日：2015-09-24

Applicant: Samsung Display Co., Ltd.

Inventor： Sun Park ,  Jeonghwan Kim ,  Wonho Jang ,  Joohyeon Jo

IPC: H01L27/12

CPC classification number: H01L27/124 ,  H01L27/1222

Abstract: A thin film transistor (TFT) circuit device comprises a substrate comprising a major surface; a gate line formed over the substrate and extending in a first direction when viewed in a viewing direction perpendicular to the major surface; an insulating layer formed over the gate line; an electrically conductive line formed over the insulating layer and extending in a second direction when viewed in the viewing direction, the second direction being different from the first direction, the electrically conductive line comprising a source line or a data line; and a semiconductor piece formed over the substrate. The semiconductor piece comprises a portion which is located between the substrate and the gate line and overlaps the gate line and the electrically conductive line at an intersection of the gate line and the electrically conductive line when viewed in the viewing direction.

Abstract translation: 一种薄膜晶体管（TFT）电路器件，包括：一个主表面; 栅极线形成在基板上并且在垂直于主表面的观察方向观察时沿第一方向延伸; 形成在栅极线上的绝缘层; 所述导电线形成在所述绝缘层上并且在从所述观察方向观察时沿第二方向延伸，所述第二方向与所述第一方向不同，所述导电线包括源极线或数据线; 以及形成在衬底上的半导体片。 半导体片包括位于衬底和栅极线之间的部分，并且当从观察方向观察时，与栅极线和导电线的交叉点处的栅极线和导电线重叠。

公开(公告)号：US20240090265A1

公开(公告)日：2024-03-14

申请号：US18508151

申请日：2023-11-13

Applicant: Samsung Display Co., Ltd.

Inventor： Jinsuk Lee ,  Jin Jeon ,  Sugwoo Jung ,  Shinbeom Choi ,  Youngin Hwang ,  Byungno Kim ,  Heeyeon Kim ,  Kohei EBISUNO ,  Nalae Lee ,  Illhwan Lee ,  Jongmin Lee ,  Joohyeon Jo ,  Changha Kwak ,  Yongseon Jo

IPC: H10K59/121 ,  H10K77/10

CPC classification number: H10K59/1213 ,  H10K77/111 ,  H01L27/1218

Abstract: Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).

公开(公告)号：US20210265438A1

公开(公告)日：2021-08-26

申请号：US17034252

申请日：2020-09-28

Applicant: Samsung Display Co., Ltd.

Inventor： Jinsuk Lee ,  Jin Jeon ,  Sugwoo Jung ,  Shinbeom Choi ,  Youngin Hwang ,  Byungno Kim ,  Heeyeon Kim ,  Kohei EBISUNO ,  Nalae Lee ,  Illhwan Lee ,  Jongmin Lee ,  Joohyeon Jo ,  Changha Kwak ,  Yongseon Jo

IPC: H01L27/32 ,  H01L51/00

Abstract: Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).

公开(公告)号：US10903250B2

公开(公告)日：2021-01-26

申请号：US16361135

申请日：2019-03-21

Applicant: Samsung Display Co., Ltd.

Inventor： Youngin Hwang ,  Elly Gil ,  Sungho Kim ,  Eungtaek Kim ,  Yongho Yang ,  Seongmin Wang ,  Jina Lee ,  Joohyeon Jo ,  Seongbaik Chu

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/3225

Abstract: A display device includes: a first electrode layer; a semiconductor layer including a source region, a drain region, and a channel region, wherein at least a portion of the source region or the drain region overlaps the first electrode layer; a second electrode layer arranged adjacent to the channel region; a third electrode layer overlapping the second electrode layer and at least a portion of the source region or the drain region; and a power line electrically connected to the first electrode layer and the third electrode layer.

公开(公告)号：US12218156B2

公开(公告)日：2025-02-04

申请号：US18388594

申请日：2023-11-10

Applicant: Samsung Display Co., Ltd.

Inventor： Youngin Hwang ,  Elly Gil ,  Sungho Kim ,  Eungtaek Kim ,  Yongho Yang ,  Seongmin Wang ,  Jina Lee ,  Joohyeon Jo ,  Seongbaik Chu

IPC: H01L27/14 ,  G09G3/3225 ,  H01L27/12 ,  H10K59/121 ,  H10K59/131

Abstract: A display device includes: a first electrode layer; a semiconductor layer including a source region, a drain region, and a channel region, wherein at least a portion of the source region or the drain region overlaps the first electrode layer; a second electrode layer arranged adjacent to the channel region; a third electrode layer overlapping the second electrode layer and at least a portion of the source region or the drain region; and a power line electrically connected to the first electrode layer and the third electrode layer.

公开(公告)号：US20210074740A1

公开(公告)日：2021-03-11

申请号：US17099629

申请日：2020-11-16

Applicant: Samsung Display Co., Ltd.

Inventor： Youngin Hwang ,  Elly Gil ,  Sungho Kim ,  Eungtaek Kim ,  Yongho Yang ,  Seongmin Wang ,  Jina Lee ,  Joohyeon Jo ,  Seongbaik Chu

IPC: H01L27/12 ,  H01L27/32 ,  G09G3/3225

Abstract: A display device includes: a first electrode layer; a semiconductor layer including a source region, a drain region, and a channel region, wherein at least a portion of the source region or the drain region overlaps the first electrode layer; a second electrode layer arranged adjacent to the channel region; a third electrode layer overlapping the second electrode layer and at least a portion of the source region or the drain region; and a power line electrically connected to the first electrode layer and the third electrode layer.

公开(公告)号：US20190279563A1

公开(公告)日：2019-09-12

申请号：US16290970

申请日：2019-03-04

Applicant: Samsung Display Co., Ltd

Inventor： Young-In HWANG ,  Elly Gil ,  Eungtaek Kim ,  Jina Lee ,  Joohyeon Jo ,  Seongbaik Chu

IPC: G09G3/3225 ,  H01L27/32 ,  G09G3/3266 ,  G09G3/3275

Abstract: A display panel of an OLED display device includes a first OLED disposed in a first sub-pixel region, a second OLED disposed in a second sub-pixel region adjacent to the first sub-pixel region in a row direction, a third OLED disposed in a third sub-pixel region adjacent to the first sub-pixel region in a column direction, a fourth OLED disposed in a fourth sub-pixel region adjacent to the second sub-pixel region in the column direction and adjacent to the third sub-pixel region in the row direction, a first sub-pixel circuit disposed in the first sub-pixel region and a fourth sub-pixel circuit disposed in the fourth sub-pixel region, both configured to drive the first OLED, a second sub-pixel circuit disposed in the second sub-pixel region, and configured to drive the fourth OLED, a third sub-pixel circuit disposed in the third sub-pixel region, and configured to drive the third OLED.

公开(公告)号：US11864421B2

公开(公告)日：2024-01-02

申请号：US17034252

申请日：2020-09-28

Applicant: Samsung Display Co., Ltd.

Inventor： Jinsuk Lee ,  Jin Jeon ,  Sugwoo Jung ,  Shinbeom Choi ,  Youngin Hwang ,  Byungno Kim ,  Heeyeon Kim ,  Kohei Ebisuno ,  Nalae Lee ,  Illhwan Lee ,  Jongmin Lee ,  Joohyeon Jo ,  Changha Kwak ,  Yongseon Jo

IPC: H01L27/32 ,  H10K59/121 ,  H10K77/10 ,  H01L27/12 ,  H01L29/786 ,  H10K59/12 ,  H10K102/00

CPC classification number: H10K59/1213 ,  H10K77/111 ,  H01L27/1218 ,  H01L27/1262 ,  H01L29/78603 ,  H10K59/1201 ,  H10K2102/311

Abstract: Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).