公开(公告)号：US11864421B2

公开(公告)日：2024-01-02

申请号：US17034252

申请日：2020-09-28

Applicant: Samsung Display Co., Ltd.

Inventor： Jinsuk Lee ,  Jin Jeon ,  Sugwoo Jung ,  Shinbeom Choi ,  Youngin Hwang ,  Byungno Kim ,  Heeyeon Kim ,  Kohei Ebisuno ,  Nalae Lee ,  Illhwan Lee ,  Jongmin Lee ,  Joohyeon Jo ,  Changha Kwak ,  Yongseon Jo

IPC: H01L27/32 ,  H10K59/121 ,  H10K77/10 ,  H01L27/12 ,  H01L29/786 ,  H10K59/12 ,  H10K102/00

CPC classification number: H10K59/1213 ,  H10K77/111 ,  H01L27/1218 ,  H01L27/1262 ,  H01L29/78603 ,  H10K59/1201 ,  H10K2102/311

Abstract: Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).

公开(公告)号：US20240090265A1

公开(公告)日：2024-03-14

申请号：US18508151

申请日：2023-11-13

Applicant: Samsung Display Co., Ltd.

Inventor： Jinsuk Lee ,  Jin Jeon ,  Sugwoo Jung ,  Shinbeom Choi ,  Youngin Hwang ,  Byungno Kim ,  Heeyeon Kim ,  Kohei EBISUNO ,  Nalae Lee ,  Illhwan Lee ,  Jongmin Lee ,  Joohyeon Jo ,  Changha Kwak ,  Yongseon Jo

IPC: H10K59/121 ,  H10K77/10

CPC classification number: H10K59/1213 ,  H10K77/111 ,  H01L27/1218

Abstract: Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).

公开(公告)号：US20210265438A1

公开(公告)日：2021-08-26

申请号：US17034252

申请日：2020-09-28

Applicant: Samsung Display Co., Ltd.

Inventor： Jinsuk Lee ,  Jin Jeon ,  Sugwoo Jung ,  Shinbeom Choi ,  Youngin Hwang ,  Byungno Kim ,  Heeyeon Kim ,  Kohei EBISUNO ,  Nalae Lee ,  Illhwan Lee ,  Jongmin Lee ,  Joohyeon Jo ,  Changha Kwak ,  Yongseon Jo

IPC: H01L27/32 ,  H01L51/00

Abstract: Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).