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公开(公告)号：US11864421B2
公开(公告)日：2024-01-02
申请号：US17034252
申请日：2020-09-28
发明人： Jinsuk Lee , Jin Jeon , Sugwoo Jung , Shinbeom Choi , Youngin Hwang , Byungno Kim , Heeyeon Kim , Kohei Ebisuno , Nalae Lee , Illhwan Lee , Jongmin Lee , Joohyeon Jo , Changha Kwak , Yongseon Jo
IPC分类号： H01L27/32 , H10K59/121 , H10K77/10 , H01L27/12 , H01L29/786 , H10K59/12 , H10K102/00
CPC分类号： H10K59/1213 , H10K77/111 , H01L27/1218 , H01L27/1262 , H01L29/78603 , H10K59/1201 , H10K2102/311
摘要： Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).
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2.发明公开公开(公告)号：US20240090265A1
公开(公告)日：2024-03-14
申请号：US18508151
申请日：2023-11-13
发明人： Jinsuk Lee , Jin Jeon , Sugwoo Jung , Shinbeom Choi , Youngin Hwang , Byungno Kim , Heeyeon Kim , Kohei EBISUNO , Nalae Lee , Illhwan Lee , Jongmin Lee , Joohyeon Jo , Changha Kwak , Yongseon Jo
IPC分类号： H10K59/121 , H10K77/10
CPC分类号： H10K59/1213 , H10K77/111 , H01L27/1218
摘要： Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).
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公开(公告)号：US20210265438A1
公开(公告)日：2021-08-26
申请号：US17034252
申请日：2020-09-28
发明人： Jinsuk Lee , Jin Jeon , Sugwoo Jung , Shinbeom Choi , Youngin Hwang , Byungno Kim , Heeyeon Kim , Kohei EBISUNO , Nalae Lee , Illhwan Lee , Jongmin Lee , Joohyeon Jo , Changha Kwak , Yongseon Jo
摘要： Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).
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