公开(公告)号：US20200165517A1

公开(公告)日：2020-05-28

申请号：US16691889

申请日：2019-11-22

Applicant: Samsung Display Co., Ltd.

Inventor： Jongmin LEE ,  Young Seok PARK ,  Taek hoon KIM ,  Shin Ae JUN ,  Jin A KIM

IPC: C09K11/88 ,  C09K11/02 ,  H01L51/50 ,  H01L33/06 ,  H01L31/0352

Abstract: A quantum dot including a seed including a first semiconductor nanocrystal including a first Group II-VI compound, a quantum well surrounding the seed, the quantum well including a second semiconductor nanocrystal including a Group IIIA metal except aluminum and a Group V element, and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal including a second Group II-VI compound, wherein the quantum dot does not include cadmium, an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal, and an ultraviolet-visible (UV-Vis) absorption spectrum curve of the quantum dot does not have an inflection point within a wavelength range of about 450 nanometers (nm) to about 600 nm, and a quantum dot composite and a device including the same.

公开(公告)号：US20180179441A1

公开(公告)日：2018-06-28

申请号：US15855436

申请日：2017-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung Display Co., Ltd. ,  SAMSUNG SDI CO., LTD.

Inventor： Young Seok PARK ,  Shang Hyeun PARK ,  Eun Joo JANG ,  Hyo Sook JANG ,  Shin Ae JUN ,  Dae Young CHUNG ,  Taekhoon KIM ,  Yuho WON

IPC: C09K11/88 ,  C09K11/02 ,  H01L51/00

CPC classification number: C09K11/883 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/025 ,  G02B5/22 ,  G02B5/223 ,  H01L27/322 ,  H01L51/0035 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/502 ,  Y10S977/774 ,  Y10S977/818 ,  Y10S977/824 ,  Y10S977/892 ,  Y10S977/896 ,  Y10S977/95

Abstract: A process for preparing a quantum dot of a core-shell structure including obtaining a first mixture including first precursor including a first metal, a ligand compound, and a solvent; adding a second precursor and a particle including a first semiconductor nanocrystal to the first mixture to obtain a second mixture; and heating the second mixture up to a reaction temperature and performing a reaction between the first precursor and the second precursor to form a layer of a shell including a crystalline or amorphous material, during formation of the layer of the shell or after formation of the layer of the shell, wherein the process includes adding an organic solution including an ammonium fluorinated salt including a solid salt having a melting point of greater than or equal to about 110° C. to the second mixture.