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    QUANTUM DOTS, COMPOSITES, AND DEVICE INCLUDING THE SAME
    1.
    发明申请
    QUANTUM DOTS, COMPOSITES, AND DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20210317365A1

    公开(公告)日：2021-10-14

    申请号：US17227668

    申请日：2021-04-12

    Applicant: Samsung Display Co., Ltd.

    Inventor： Hyeyeon YANG ,  Jooyeon AHN ,  Tae Gon KIM ,  Jongmin LEE ,  Shin Ae JUN

    IPC: C09K11/62 ,  C09K11/56 ,  C09K11/70 ,  H05B33/14 ,  G03F7/004 ,  G03F7/20

    Abstract: A quantum dot, and a quantum dot composite and a device including the same, wherein the quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well layer disposed on the seed and a shell disposed on the quantum well layer, the shell including a second semiconductor nanocrystal, and wherein the quantum dot does not include cadmium, wherein the first semiconductor nanocrystal includes a first zinc chalcogenide, wherein the second semiconductor nanocrystal includes a second zinc chalcogenide, and the quantum well layer includes an alloy semiconductor nanocrystal including indium (In), phosphorus (P), and gallium (Ga), and wherein a bandgap energy of the alloy semiconductor nanocrystal is less than a bandgap energy of the first semiconductor nanocrystal and less than a bandgap energy of the second semiconductor nanocrystal.

    Quantum well nanocrystals with quaternary alloy structure for improved light absorption
    2.
    发明申请
    Quantum well nanocrystals with quaternary alloy structure for improved light absorption 有权

    公开(公告)号：US20210284907A1

    公开(公告)日：2021-09-16

    申请号：US17199613

    申请日：2021-03-12

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jooyeon AHN ,  Hyeyeon YANG ,  Tae Gon KIM ,  Jongmin LEE ,  Shin Ae JUN

    IPC: C09K11/56 ,  C09K11/54 ,  C09K11/70 ,  C09K11/62 ,  C08J5/18 ,  C09K11/06 ,  H01L51/50

    Abstract: A quantum dot, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes a template including a first semiconductor nanocrystal, a quantum well (e.g., quantum well layer) disposed on the template and a shell disposed on the quantum well, the shell including a second semiconductor nanocrystal, and wherein the quantum dot does not include cadmium, wherein the first semiconductor nanocrystal includes a first zinc chalcogenide, wherein the second semiconductor nanocrystal includes a second zinc chalcogenide, and the quantum well layer includes an alloy semiconductor nanocrystal including indium (In), phosphorus (P), zinc (Zn), and a chalcogen element wherein a bandgap energy of the alloy semiconductor nanocrystal is less than a bandgap energy of the first semiconductor nanocrystal and less than a bandgap energy of the second semiconductor nanocrystal.

    QUANTUM DOTS, COMPOSITIONS AND COMPOSITE INCLUDING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME
    3.
    发明申请
    QUANTUM DOTS, COMPOSITIONS AND COMPOSITE INCLUDING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20210095205A1

    公开(公告)日：2021-04-01

    申请号：US17036068

    申请日：2020-09-29

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jooyeon AHN ,  Jongmin LEE ,  Taekhoon KIM ,  Shin Ae JUN ,  Tae Gon KIM ,  Garam PARK

    IPC: C09K11/88 ,  C09K11/02 ,  H01L51/50 ,  C01G9/08 ,  C01B19/00 ,  C01G9/00

    Abstract: A quantum dot including a nanoparticle template including a first semiconductor nanocrystal including a Group II-VI compound, a quantum well including a second semiconductor nanocrystal disposed on the nanoparticle template, the second semiconductor nanocrystal including a Group IIIA metal excluding aluminum and a Group V element; and a shell comprising a third semiconductor nanocrystal disposed on the quantum well, the third semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dot does not include cadmium, a band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the first semiconductor nanocrystal, the band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the third semiconductor nanocrystal, and the quantum dot includes an additional metal including an alkali metal, an alkaline earth metal, aluminum, iron, cobalt, nickel, copper, zinc, or a combination thereof.

    QUANTUM DOTS, COMPOSITIONS AND COMPOSITES INCLUDING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME
    4.
    发明申请
    QUANTUM DOTS, COMPOSITIONS AND COMPOSITES INCLUDING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20200165517A1

    公开(公告)日：2020-05-28

    申请号：US16691889

    申请日：2019-11-22

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jongmin LEE ,  Young Seok PARK ,  Taek hoon KIM ,  Shin Ae JUN ,  Jin A KIM

    IPC: C09K11/88 ,  C09K11/02 ,  H01L51/50 ,  H01L33/06 ,  H01L31/0352

    Abstract: A quantum dot including a seed including a first semiconductor nanocrystal including a first Group II-VI compound, a quantum well surrounding the seed, the quantum well including a second semiconductor nanocrystal including a Group IIIA metal except aluminum and a Group V element, and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal including a second Group II-VI compound, wherein the quantum dot does not include cadmium, an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal, and an ultraviolet-visible (UV-Vis) absorption spectrum curve of the quantum dot does not have an inflection point within a wavelength range of about 450 nanometers (nm) to about 600 nm, and a quantum dot composite and a device including the same.

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