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公开(公告)号：US11276831B2
公开(公告)日：2022-03-15
申请号：US16578408
申请日：2019-09-23
发明人： Heekyun Shin , Byunghoon Kang , Youngjun Kim , Sumin An , Woojin Cho , Seungjun Moon , Jeongmin Park , Dongkyun Seo , Junho Sim
IPC分类号： H01L51/00 , H01L27/32 , H01L51/56 , B32B7/14 , B32B37/12 , B32B37/24 , B32B38/00 , C09J9/02 , C09J179/02 , H01L51/52
摘要： A method of manufacturing a flexible display apparatus includes: preparing a substrate; forming a first charge adhesive layer having a first charge on the substrate; forming a second charge adhesive layer having a second charge, which is opposite to the first charge, on the first charge adhesive layer; forming a first charge adhesive pattern and a second charge adhesive pattern by removing an edge of each of the first charge adhesive layer and the second charge adhesive layer; forming a flexible substrate on the substrate on which the first charge adhesive pattern and the second charge adhesive pattern are formed; forming a display unit on the flexible substrate; cutting the substrate, the first charge adhesive pattern, the second charge adhesive pattern, the flexible substrate, and the display unit along a cutting line; and separating the substrate and the flexible substrate.
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公开(公告)号：US20220223807A1
公开(公告)日：2022-07-14
申请号：US17694494
申请日：2022-03-14
发明人： Heekyun SHIN , Byunghoon Kang , Youngjun Kim , Sumin An , Woojin Cho , Seungjun Moon , Jeongmin Park , Dongkyun Seo , Junho Sim
IPC分类号： H01L51/00 , B32B7/14 , B32B37/12 , B32B37/24 , B32B38/00 , C09J9/02 , C09J179/02 , H01L27/32 , H01L51/52 , H01L51/56
摘要： A method of manufacturing a flexible display apparatus includes: preparing a substrate; forming a first charge adhesive layer having a first charge on the substrate; forming a second charge adhesive layer having a second charge, which is opposite to the first charge, on the first charge adhesive layer; forming a first charge adhesive pattern and a second charge adhesive pattern by removing an edge of each of the first charge adhesive layer and the second charge adhesive layer; forming a flexible substrate on the substrate on which the first charge adhesive pattern and the second charge adhesive pattern are formed; forming a display unit on the flexible substrate; cutting the substrate, the first charge adhesive pattern, the second charge adhesive pattern, the flexible substrate, and the display unit along a cutting line; and separating the substrate and the flexible substrate.
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3.发明授权公开(公告)号：US10465296B2
公开(公告)日：2019-11-05
申请号：US15005614
申请日：2016-01-25
发明人： Soomin An , Youngjun Kim , Hongsick Park , Inseol Kuk , Youngchul Park , Inho Yu , Seungsoo Lee , Jongmun Lee , Daesung Lim
IPC分类号： C23F1/18 , C23F1/26 , H01L27/12 , H01L21/3213 , H01L29/49
摘要： An etchant composition includes an etchant composition that includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.1 wt % to about 10 wt % of an aliphatic sulfonic acid, about 1 wt % to about 20 wt % of an organic acid or an organic acid salt, and water based on a total weight of the etchant composition.
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公开(公告)号：US10128382B2
公开(公告)日：2018-11-13
申请号：US15866890
申请日：2018-01-10
发明人： Seungho Yoon , Bong-Kyun Kim , Youngjun Kim , Hongsick Park , Byeong-Beom Kim , Sangwon Shin
IPC分类号： G02F1/1368 , H01L29/786 , H01L27/12 , H01L29/66 , H01L21/465 , H01L21/467 , H01L29/45 , H01L23/532
摘要： A thin film transistor substrate includes a thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode. Each of the source electrode and the drain electrode includes a wire layer and a protective layer. The protective layer includes zinc oxide in an amount greater than about 70% by weight and less than about 85% by weight and indium oxide in an amount greater than about 15% by weight and less than about 30% by weight.
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公开(公告)号：US09899531B2
公开(公告)日：2018-02-20
申请号：US14710739
申请日：2015-05-13
发明人： Seungho Yoon , Bong-Kyun Kim , Youngjun Kim , Hongsick Park , Byeong-Beom Kim , Sangwon Shin
IPC分类号： G02F1/136 , H01L29/786 , H01L27/12 , H01L29/66 , H01L21/465 , H01L21/467 , H01L29/45 , G02F1/1368 , H01L23/532
CPC分类号： H01L29/7869 , G02F1/1368 , H01L21/465 , H01L21/467 , H01L23/53238 , H01L27/124 , H01L29/45 , H01L29/66969 , H01L2924/0002 , H01L2924/00
摘要： A thin film transistor substrate includes a thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode. Each of the source electrode and the drain electrode includes a wire layer and a protective layer. The protective layer includes zinc oxide in an amount greater than about 70% by weight and less than about 85% by weight and indium oxide in an amount greater than about 15% by weight and less than about 30% by weight.
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