Display device
    2.
    发明授权

    公开(公告)号:US12185602B2

    公开(公告)日:2024-12-31

    申请号:US18437088

    申请日:2024-02-08

    Abstract: A display device comprises a substrate; a circuit array layer comprising pixel drivers, data lines, first dummy lines, and second dummy lines; and a light emitting array layer. The display area comprises middle, first side, and second side regions. The data lines comprise first, second, and third data lines disposed in the middle, first side, and second side regions, respectively. The first dummy lines comprise a first data detour line disposed in the first side region and adjacent to a part of the second data line, and auxiliary lines. The second dummy lines comprise a second data detour line configured to connect the first data detour line to the third data line, and additional lines. The auxiliary lines comprise a bias auxiliary line to which a bias power is applied; and a second power auxiliary line to which a second power is applied.

    Pixel and display device having a frame frequency with a plurality of non-emission periods

    公开(公告)号:US11741887B2

    公开(公告)日:2023-08-29

    申请号:US17745179

    申请日:2022-05-16

    CPC classification number: G09G3/32 G09G2300/0842 G09G2310/0278

    Abstract: A display device includes a pixel, a scan driver supplying first to third scan signals in a first non-emission period and supplying the second scan signal in a second non-emission period, an emission driver supplying an emission control signal in the first and second non-emission periods, and a data driver supplying a data signal in the first non-emission period. The pixel includes a light-emitting element, a first transistor, a second transistor connected between the data line and a second node, a first capacitor connected between the first and second nodes, a third transistor connected between a third power line and the first node, a storage capacitor connected between the first and third nodes, a fourth transistor connected between the third node and a fourth power line, a fifth transistor connected between the first power line and the first transistor, and a sixth transistor supplying a fifth supply voltage.

    Pixel of an organic light emitting diode display device, and organic light emitting diode display device

    公开(公告)号:US11557254B2

    公开(公告)日:2023-01-17

    申请号:US16984010

    申请日:2020-08-03

    Abstract: A pixel of an OLED display device includes a capacitor coupled between first and second nodes, first and second transistors, each including a gate receiving a respective initialization signal, a first terminal receiving a first power supply voltage, and a second terminal coupled to the capacitor, a third transistor including a first terminal coupled to a data line and a second terminal coupled to the first node, a fourth transistor including a gate coupled to the second node, a first terminal receiving the first power supply voltage, and a second terminal coupled to a third node, a fifth transistor including a first terminal coupled to the third node and a second terminal coupled to the second node, sixth and seventh transistors receiving a scan signal, eighth and ninth transistors receiving an emission signal, and an OLED.

    Display device having light shielding pattern

    公开(公告)号:US11515338B2

    公开(公告)日:2022-11-29

    申请号:US16832796

    申请日:2020-03-27

    Abstract: A display device includes: a substrate; an active layer; a first insulating layer on the active layer; a gate electrode; a second insulating layer on the first conductive layer; a second conductive layer on the second insulating layer; a third insulating layer on the second conductive layer; and a source electrode connected to the source region of the first active pattern through a contact hole passing through the first insulating layer and the second insulating layer, and a drain electrode connected to the drain region, wherein the first active pattern, the gate electrode, the source electrode and the drain electrode constitute a thin film transistor, the display device further comprising at least one light shielding pattern around the thin film transistor, wherein the light shielding pattern includes a side light shielding pattern such that the third conductive layer passes through at least the third insulating layer.

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