Display device and manufacturing method thereof

    公开(公告)号:US10446779B2

    公开(公告)日:2019-10-15

    申请号:US15974814

    申请日:2018-05-09

    摘要: A display device includes: a substrate including a display area at which an image is displayed with light and a pad region at which the image is not displayed; a plurality of pads through which a signal is applied to the display area, the pads disposed in the pad region; a first insulating layer disposed between adjacent pads among the plurality of pads, in which a first opening is defined which exposes a respective pad among the adjacent pads; a second insulating layer disposed in the first opening of the first insulating layer, in which a second opening is defined which exposes the respective pad exposed by the first opening of the first insulating layer; and silver particles disposed in the first opening, between the first insulating layer and the second insulating layer.

    Thin film transistor array panel
    2.
    发明授权

    公开(公告)号:US10396212B2

    公开(公告)日:2019-08-27

    申请号:US15871742

    申请日:2018-01-15

    摘要: A thin film transistor array panel according to an exemplary embodiment includes: a substrate; a metal pattern positioned on the substrate; a buffer layer positioned on the metal pattern; and a semiconductor layer positioned on the buffer layer and including a source region, a channel region, and a drain region, wherein the metal pattern overlaps at least one of the source region and the drain region, and the metal pattern does not overlap the channel region.

    Flexible display device including a sacrificial layer

    公开(公告)号:US10720476B2

    公开(公告)日:2020-07-21

    申请号:US16419471

    申请日:2019-05-22

    摘要: A method of manufacturing a flexible display device includes forming a base substrate on a first sacrificial layer formed on a first supporting substrate, forming a display device array on the base substrate, forming a second sacrificial layer on a second supporting substrate, forming a touch array on the second sacrificial layer, adhering the first supporting substrate onto the second supporting substrate using an adhesive, irradiating laser energy onto the first sacrificial layer to remove the first sacrificial layer and separate the first supporting substrate from the base substrate, and irradiating laser energy onto the second sacrificial layer to separate interfaces of the second supporting substrate and the second sacrificial layer from each other, such that the second sacrificial layer is fixed on the touch array. The second sacrificial layer includes at least one of oxidized molybdenum, lead zirconate titanate, gallium nitride, and an amorphous silicon based inorganic material.

    Display device having light shielding pattern

    公开(公告)号:US11515338B2

    公开(公告)日:2022-11-29

    申请号:US16832796

    申请日:2020-03-27

    摘要: A display device includes: a substrate; an active layer; a first insulating layer on the active layer; a gate electrode; a second insulating layer on the first conductive layer; a second conductive layer on the second insulating layer; a third insulating layer on the second conductive layer; and a source electrode connected to the source region of the first active pattern through a contact hole passing through the first insulating layer and the second insulating layer, and a drain electrode connected to the drain region, wherein the first active pattern, the gate electrode, the source electrode and the drain electrode constitute a thin film transistor, the display device further comprising at least one light shielding pattern around the thin film transistor, wherein the light shielding pattern includes a side light shielding pattern such that the third conductive layer passes through at least the third insulating layer.

    Flexible display device and method of manufacturing the same

    公开(公告)号:US10332941B2

    公开(公告)日:2019-06-25

    申请号:US15447936

    申请日:2017-03-02

    摘要: A method of manufacturing a flexible display device includes forming a base substrate on a first sacrificial layer formed on a first supporting substrate, forming a display device array on the base substrate, forming a second sacrificial layer on a second supporting substrate, forming a touch array on the second sacrificial layer, adhering the first supporting substrate onto the second supporting substrate using an adhesive, irradiating laser energy onto the first sacrificial layer to remove the first sacrificial layer and separate the first supporting substrate from the base substrate, and irradiating laser energy onto the second sacrificial layer to separate interfaces of the second supporting substrate and the second sacrificial layer from each other, such that the second sacrificial layer is fixed on the touch array, The second sacrificial layer includes at least one of oxidized molybdenum, lead zirconate titanate, gallium nitride, and an amorphous silicon based inorganic material.

    Display device and manufacturing method thereof

    公开(公告)号:US11049921B2

    公开(公告)日:2021-06-29

    申请号:US16843489

    申请日:2020-04-08

    摘要: A display device includes a scan line that extends in a first direction on a substrate and that transmits a scan signal; a data line that extends in a second direction that intersects the first direction and that transmits a data signal; a driving voltage line that extends in the second direction and that transmits a driving voltage; a transistor that includes a second transistor connected to the scan line and the data line and a first transistor connected to the second transistor; a light emitting device connected to the transistor; and a conductive pattern disposed between the substrate and the first transistor, where each of the first and second transistors includes an active pattern with a stacked first semiconductor layer and a second semiconductor layer, which have different crystalline states.

    Thin film transistor, manufacturing method thereof, and display device having the same

    公开(公告)号:US10804299B2

    公开(公告)日:2020-10-13

    申请号:US16275829

    申请日:2019-02-14

    摘要: A thin film transistor includes a first blocking layer disposed on a substrate, and an active pattern disposed on the first blocking layer. The active pattern includes a source region, a drain region, and a channel region disposed between the source region and the drain region. The thin film transistor further includes a gate electrode disposed on the active pattern. The channel region corresponds to a portion of the active pattern overlapped by the gate electrode. The thin film transistor additionally includes a source electrode connected to the source region, and a drain electrode connected to the drain region. The active pattern includes a first part and a second part. The first part partially overlaps with the first blocking layer, and the first part and the second part have different thicknesses from each other.