LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    3.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    液晶显示装置及其制造方法

    公开(公告)号:US20170038623A1

    公开(公告)日:2017-02-09

    申请号:US15228549

    申请日:2016-08-04

    Abstract: A liquid crystal display device includes a substrate; a gate electrode on the substrate; a semiconductor pattern layer on the gate electrode; and source and drain electrodes on the semiconductor pattern layer and spaced apart from each other. The source electrode includes: a first facing portion facing the drain electrode; and a first protrusion protruding toward the drain electrode from the first protrusion. The drain electrode includes: a second facing portion facing the source electrode; and a second protrusion protruding toward the source electrode from the second facing portion and facing the first protrusion. The semiconductor pattern layer includes: a source area overlapping the source electrode; a drain area overlapping the drain electrode; and a bridge area connecting the source area with the drain area, and a space defined between the first protrusion and the second protrusion is on the bridge area.

    Abstract translation: 液晶显示装置包括:基板; 基板上的栅电极; 栅电极上的半导体图案层; 以及半导体图案层上的源电极和漏电极并彼此间隔开。 源电极包括:面向漏电极的第一面对部分; 以及从所述第一突起朝所述漏电极突出的第一突起。 漏电极包括:面对源电极的第二面对部分; 以及从所述第二面对部朝向所述源电极突出并面对所述第一突起的第二突起。 半导体图案层包括:与源电极重叠的源极区域; 漏极区域与漏电极重叠; 以及将源区域与排水区域连接的桥接区域,并且在第一突起部和第二突起部之间限定的空间在桥区域上。

    ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND A MANUFACTURING METHOD THEREOF

    公开(公告)号:US20210057504A1

    公开(公告)日:2021-02-25

    申请号:US16894953

    申请日:2020-06-08

    Abstract: An organic light emitting diode display including: a substrate; a TFT on the substrate; a planarization layer on the TFT; a pixel electrode on the planarization layer, wherein the pixel electrode includes upper and lower layers including a transparent conductive oxide and an intermediate layer including silver; an etch stop layer on the pixel electrode, wherein an upper surface of the pixel electrode is exposed by the etch stop layer; a partition on the etch stop layer, wherein the upper surface of the pixel electrode is exposed by the partition; an organic emission layer on the upper surface of the pixel electrode where the upper surface of the pixel electrode is exposed by the etch stop layer and the partition; and a common electrode on the organic emission layer and the partition, wherein the etch stop layer covers an edge and a side surface of the pixel electrode.

    ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND A MANUFACTURING METHOD THEREOF

    公开(公告)号:US20220254863A1

    公开(公告)日:2022-08-11

    申请号:US17732797

    申请日:2022-04-29

    Abstract: An organic light emitting diode display including: a substrate; a TFT on the substrate; a planarization layer on the TFT; a pixel electrode on the planarization layer, wherein the pixel electrode includes upper and lower layers including a transparent conductive oxide and an intermediate layer including silver; an etch stop layer on the pixel electrode, wherein an upper surface of the pixel electrode is exposed by the etch stop layer; a partition on the etch stop layer, wherein the upper surface of the pixel electrode is exposed by the partition; an organic emission layer on the upper surface of the pixel electrode where the upper surface of the pixel electrode is exposed by the etch stop layer and the partition; and a common electrode on the organic emission layer and the partition, wherein the etch stop layer covers an edge and a side surface of the pixel electrode.

    DISPLAY DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRODE FORMING METHOD

    公开(公告)号:US20190081088A1

    公开(公告)日:2019-03-14

    申请号:US16124356

    申请日:2018-09-07

    Abstract: A display device includes: a substrate; first and second transistors provided on the substrate to be spaced apart from each other, the first and second transistors being electrically connected to each other; and a display unit electrically connected to the first transistor, wherein the first transistor includes a first semiconductor layer including crystalline silicon, a first gate electrode, a first source electrode, and a first drain electrode, wherein the second transistor includes a second semiconductor layer including an oxide semiconductor, a second gate electrode, a second source electrode, and a second drain electrode, wherein each of the second source electrode and the second drain electrode includes a first layer that includes molybdenum and is provided on the second semiconductor layer, a second layer that includes aluminum and is provided on the first layer, and a third layer that includes titanium and is provided on the second layer.

Patent Agency Ranking