Bulk-acoustic wave resonator
    1.
    发明授权

    公开(公告)号:US11277113B2

    公开(公告)日:2022-03-15

    申请号:US16936807

    申请日:2020-07-23

    IPC分类号: H03H9/13 H03H9/02 H03H9/17

    摘要: A bulk-acoustic wave resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; a metal pad connected to the first electrode and the second electrode; and a connection member connected an upper surface of the metal pad. A lower end portion of the connection member includes a tapered portion decreasing in a diameter in a direction toward a lower end of the connection member, and an angle between an inclined surface of the tapered portion and the upper surface of the metal pad is 45° to 80°.

    Semiconductor package
    6.
    发明授权

    公开(公告)号:US11171096B2

    公开(公告)日:2021-11-09

    申请号:US16655284

    申请日:2019-10-17

    IPC分类号: H01L23/66 H03H9/02 H03H9/64

    摘要: A semiconductor package includes a main substrate, a resonator device disposed above the main substrate, a wiring portion connected to the resonator device, an electrical connection structure connected to the wiring portion and the main substrate, an encapsulant encapsulating the resonator device and the electrical connection structure, and a heat dissipation member bonded to and mounted on the resonator device. A cavity is provided in the resonator device, and is formed between the resonance portion and a resonator device substrate provided in the resonator device.