公开(公告)号：US20210367562A1

公开(公告)日：2021-11-25

申请号：US17005369

申请日：2020-08-28

申请人： Samsung Electro-Mechanics Co., Ltd.

发明人： Jong Ok HA ,  Iizuka SHINICHI ,  Kwang Du LEE ,  Jeong Hoon KIM ,  Young Wong JANG

IPC分类号： H03F1/30 ,  H03F3/21

摘要： An apparatus that generates and limits a bias current of a power amplifier is provided. The apparatus includes a bias current circuit that generates a bias current to bias the power amplifier, and critically limit an increase in bias current, and a band gap reference circuit that provides a reference voltage or a reference current to the bias current circuit. The bias current circuit is configured to critically limit the increase in bias current, as a first bias transistor that generates the bias current is converted from a triode region to a saturation region, based on the reference voltage or the reference current.

公开(公告)号：US20200059202A1

公开(公告)日：2020-02-20

申请号：US16239735

申请日：2019-01-04

申请人： Samsung Electro-Mechanics Co., Ltd.

发明人： Byeong Hak JO ,  Jong Ok HA ,  Young Wong JANG ,  Jeong Hoon KIM

IPC分类号： H03F1/30 ,  H03F3/217 ,  H03F1/02

摘要： A bias circuit includes a current source to generate a reference current, a temperature compensation portion in an off-state in an initial start period in response to a first control signal, and in an on-state in a normal driving period, subsequent to the initial start period, and to receive a first current of the reference current, and a bias output portion to generate a warm up current based on the reference current in the initial start period and to generate a bias current based on a second current, which is lower than the reference current by an amount of the first current, in the normal driving period.

公开(公告)号：US20180145708A1

公开(公告)日：2018-05-24

申请号：US15667808

申请日：2017-08-03

申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.

发明人： Byeong Hak JO ,  Jeong Hoon KIM ,  Hyun PAEK ,  Young Wong JANG

IPC分类号： H04B1/10 ,  H03K17/16 ,  H01P1/15 ,  H04B1/50

CPC分类号： H04B1/109 ,  H01P1/15 ,  H03K17/162 ,  H03K17/693 ,  H03K2217/0018 ,  H03K2217/0054 ,  H04B1/50

摘要： A radio frequency switch apparatus includes a radio frequency switch, a dynamic bias circuit, and a switch control circuit. The radio frequency switch includes a first radio frequency switch circuit connected between a first signal terminal and an input terminal. The first radio frequency switch circuit includes a series switch and a shunt switch. The dynamic bias circuit is configured to generate a bias voltage and a buffer voltage lower than a battery voltage by a preset voltage, using the battery voltage and configured to output the bias voltage to a signal line connected to the input terminal. The switch control circuit is configured to generate first and second gate voltages to switch the first radio frequency switch circuit, based on a band selection signal, using the battery voltage and the buffer voltage.