公开(公告)号：US20210029316A1

公开(公告)日：2021-01-28

申请号：US16801887

申请日：2020-02-26

Applicant: Samsung Electronics Co., LTD.

Inventor： KYUNGHO LEE ,  EUNSUB SHIM ,  JUNGBIN YUN ,  SUNGSOO CHOI ,  MASATO FUJITA

IPC: H04N5/369 ,  H01L27/146 ,  H01L23/00 ,  H04N5/378 ,  H04N5/341 ,  H04N5/351 ,  H04N5/3745

Abstract: An image sensor includes a photodiode generating a charge in response to light, a transfer transistor connecting the photodiode and a floating diffusion, a reset transistor connected between the floating diffusion and a power node, a boosting capacitor connected to the floating diffusion, and adjusting a capacity of the floating diffusion in response to a boosting control signal, and a bias circuit having first and second current circuits for supplying different bias currents to an output node to which a voltage signal corresponding to a charge accumulated in the floating diffusion is output. The boosting control signal decreases from a high level to a low level after the transfer transistor is turned off, and the reset transistor is switched from a turned on state to a turned off state when the bias currents of the first and second current circuits are simultaneously provided to the output node.