公开(公告)号：US20210029316A1

公开(公告)日：2021-01-28

申请号：US16801887

申请日：2020-02-26

Applicant: Samsung Electronics Co., LTD.

Inventor： KYUNGHO LEE ,  EUNSUB SHIM ,  JUNGBIN YUN ,  SUNGSOO CHOI ,  MASATO FUJITA

IPC: H04N5/369 ,  H01L27/146 ,  H01L23/00 ,  H04N5/378 ,  H04N5/341 ,  H04N5/351 ,  H04N5/3745

Abstract: An image sensor includes a photodiode generating a charge in response to light, a transfer transistor connecting the photodiode and a floating diffusion, a reset transistor connected between the floating diffusion and a power node, a boosting capacitor connected to the floating diffusion, and adjusting a capacity of the floating diffusion in response to a boosting control signal, and a bias circuit having first and second current circuits for supplying different bias currents to an output node to which a voltage signal corresponding to a charge accumulated in the floating diffusion is output. The boosting control signal decreases from a high level to a low level after the transfer transistor is turned off, and the reset transistor is switched from a turned on state to a turned off state when the bias currents of the first and second current circuits are simultaneously provided to the output node.

公开(公告)号：US20220302191A1

公开(公告)日：2022-09-22

申请号：US17655582

申请日：2022-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGGU JIN ,  EUNSUB SHIM ,  JUNGCHAK AHN

IPC: H01L27/146

Abstract: An image sensor is provided. The image sensor includes a semiconductor substrate including a first surface and a second surface opposite to each other. A semiconductor pattern is disposed on the first surface of the semiconductor substrate and it extends in a first direction perpendicular to the first surface. A buried transmission gate electrode is disposed in a transmission gate trench extending from the first surface of the semiconductor substrate to an interior of the semiconductor substrate. A first gate electrode at least partially surrounds a side wall of the semiconductor pattern and has a ring-shaped horizontal cross-section. A color filter is disposed on the second surface of the semiconductor substrate.

公开(公告)号：US20240047501A1

公开(公告)日：2024-02-08

申请号：US18345429

申请日：2023-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUNSUB SHIM ,  WONSEOK LEE ,  HAEWOOK JEONG

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14636

Abstract: An image sensor includes a first substrate layer, a second substrate layer that is thicker than the first substrate layer, an inter-substrate insulating layer arranged between the first substrate layer and the second substrate layer, a first impurity region, a pair of second impurity regions, and a third impurity region, which are spaced apart from each other and arranged on some portions of the first substrate layer. The image sensor further includes a photodiode region constituting a photo sensing device arranged on the second substrate layer, a transfer transistor including a first gate electrode layer that fills a gate hole, penetrates the first substrate layer and the inter-substrate insulating layer, and extends to the second substrate layer, and a floating diffusion region arranged on a side of the first substrate layer and connected to the transfer transistor.

公开(公告)号：US20220337772A1

公开(公告)日：2022-10-20

申请号：US17857135

申请日：2022-07-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUNSUB SHIM ,  KYUNGHO LEE

IPC: H04N5/369 ,  H04N5/349 ,  H04N9/04 ,  H04N5/347 ,  H04N5/3745 ,  H01L27/146

Abstract: An image sensor operating in multiple resolution modes including a low resolution mode and a high resolution mode includes a pixel array including a plurality of pixels, wherein each pixel in the plurality of pixels comprises a micro-lens, a first subpixel including a first photodiode, a second subpixel including a second photodiode, and the first subpixel and the second subpixel are adjacently disposed and share a floating diffusion region. The image sensor also includes a row driver providing control signals to the pixel array to control performing of an auto focus (AF) function, such that performing the AF function includes performing the AF function according to pixel units in the high resolution mode and performing the AF function according to pixel group units in the low resolution mode. A resolution corresponding to the low resolution mode is equal to or less than ¼ times a resolution corresponding to the high resolution mode.

公开(公告)号：US20240072088A1

公开(公告)日：2024-02-29

申请号：US18223649

申请日：2023-07-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUNSUB SHIM

IPC: H01L27/146

CPC classification number: H01L27/14627 ,  H01L27/14621 ,  H01L27/14645

Abstract: An image sensor includes a shared pixel including a plurality of subpixels and a plurality of micro-lenses respectively disposed at upper portions of the plurality of subpixels. The shared pixel shares one color pattern, and a highest point of each of the plurality of micro-lenses is close to a center of the shared pixel.

公开(公告)号：US20220285413A1

公开(公告)日：2022-09-08

申请号：US17501584

申请日：2021-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUNSUB SHIM ,  KYUNGHO LEE

IPC: H01L27/146

Abstract: An image sensor includes a pixel array including pixels, wherein each pixel includes at least one photodiode generating electrical charge and a pixel circuit providing a pixel signal based on the electrical charge. The images sensor also includes a logic circuit configured to generate an image based on the pixel signal, wherein the pixel circuit includes a parallel-connected first reset transistor and second reset transistor, and the logic circuit determines whether the second reset transistor is turned ON/OFF based on a level of incident light received by the at least one photodiode during an exposure time period.