公开(公告)号：US20250133841A1

公开(公告)日：2025-04-24

申请号：US18738595

申请日：2024-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MASATO FUJITA ,  Seungki Jung

IPC: H01L27/146

Abstract: An image sensor is provided. The image sensor includes: a substrate that includes a plurality of pixels, each of which includes a left sub-pixel and a right sub-pixel; a well region in the substrate on each of the plurality of pixels, the well region connecting the left sub-pixel and the right sub-pixel to each other; a pixel separation part that separates the plurality of pixels from each other and extends in the substrate between the left sub-pixel and the right sub-pixel; a left transfer transistor and a first logic transistor on the left sub-pixel; a right transfer transistor and a second logic transistor on the right sub-pixel; and a ground region in the substrate on one of the left sub-pixel and the right sub-pixel, and in contact with the well region. The ground region is adjacent to a corner of each of the plurality of pixels.

公开(公告)号：US20240421171A1

公开(公告)日：2024-12-19

申请号：US18818755

申请日：2024-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： TAESUB JUNG ,  KYUNGHO LEE ,  MASATO FUJITA ,  DOOSIK SEOL ,  KYUNGDUCK LEE

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor is provided. The image sensor includes a first pixel region and a second pixel region located within a semiconductor substrate, a first isolation layer surrounding the first pixel region and the second pixel region, a second isolation layer located between the first pixel region and the second pixel region, and a microlens arranged on the first pixel region and the second pixel region. Each of the first pixel region and the second pixel region include a photoelectric conversion device. The second isolation layer includes at least one first open region that exposes a portion of an area located between the first pixel region and the second pixel region.

公开(公告)号：US20220360730A1

公开(公告)日：2022-11-10

申请号：US17867391

申请日：2022-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MASATO FUJITA ,  KYUNGHO LEE

IPC: H04N5/374 ,  H04N5/378 ,  H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a transfer gate electrode provided on the first surface of the semiconductor substrate, readout circuit transistors spaced apart from the transfer gate electrode and provided on the first surface of the semiconductor substrate, and a photoelectric conversion layer provided in the semiconductor substrate at a side of the transfer gate electrode and including dopants of a first conductivity type. The photoelectric conversion layer includes a first region having a first thickness and a second region having a second thickness that is less than the first thickness. The second region overlaps with at least a portion of the readout circuit transistors in a direction perpendicular to the first surface of the semiconductor substrate.

公开(公告)号：US20210029316A1

公开(公告)日：2021-01-28

申请号：US16801887

申请日：2020-02-26

Applicant: Samsung Electronics Co., LTD.

Inventor： KYUNGHO LEE ,  EUNSUB SHIM ,  JUNGBIN YUN ,  SUNGSOO CHOI ,  MASATO FUJITA

IPC: H04N5/369 ,  H01L27/146 ,  H01L23/00 ,  H04N5/378 ,  H04N5/341 ,  H04N5/351 ,  H04N5/3745

Abstract: An image sensor includes a photodiode generating a charge in response to light, a transfer transistor connecting the photodiode and a floating diffusion, a reset transistor connected between the floating diffusion and a power node, a boosting capacitor connected to the floating diffusion, and adjusting a capacity of the floating diffusion in response to a boosting control signal, and a bias circuit having first and second current circuits for supplying different bias currents to an output node to which a voltage signal corresponding to a charge accumulated in the floating diffusion is output. The boosting control signal decreases from a high level to a low level after the transfer transistor is turned off, and the reset transistor is switched from a turned on state to a turned off state when the bias currents of the first and second current circuits are simultaneously provided to the output node.

公开(公告)号：US20220359585A1

公开(公告)日：2022-11-10

申请号：US17675145

申请日：2022-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MASATO FUJITA ,  KYUNGHO LEE ,  DOOSIK SEOL ,  TAESUB JUNG

IPC: H01L27/146

Abstract: Provided is an image sensor including a semiconductor substrate having first and second surfaces disposed opposite to the first surface, a pixel separation structure disposed in the semiconductor substrate and defining and surrounding a pixel region, first and second photoelectric conversion regions disposed in the semiconductor substrate on the pixel region, a first transfer gate electrode disposed on the first surface of the semiconductor substrate and between the first photoelectric conversion region and a first floating diffusion region, a second transfer gate electrode disposed on the first surface of the semiconductor substrate and between the second photoelectric conversion region and a second floating diffusion region, a pixel gate electrode disposed on the first surface of the semiconductor substrate and overlapping one of the first and second photoelectric conversion regions, and impurity regions disposed on opposite sides of the pixel gate electrode.

公开(公告)号：US20220173139A1

公开(公告)日：2022-06-02

申请号：US17443791

申请日：2021-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYUNGDUCK LEE ,  SEUNGKI BAEK ,  KYUNGHO LEE ,  HYUNCHEOL KIM ,  DOOSIK SEOL ,  TAESUB JUNG ,  MASATO FUJITA

IPC: H01L27/146

Abstract: An image sensor includes: (1) a substrate having first and second surfaces opposing each other in a first direction and a plurality of unit pixels, (2) first and second photodiodes disposed in the substrate in each of the plurality of unit pixels and isolated from each other in a second direction perpendicular to the first direction, (3) a first device isolation film disposed between the plurality of unit pixels, and (4) a pixel internal isolation film disposed in at least one of the plurality of unit pixels. A second device isolation film overlaps at least one of the first and second photodiodes in the first direction. A pair of third device isolation films: (a) extend from the first device isolation film into the unit pixel in a third direction perpendicular to the first direction and the second direction and (b) oppose each other.

公开(公告)号：US20220109012A1

公开(公告)日：2022-04-07

申请号：US17345284

申请日：2021-06-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANGHYUCK MOON ,  KYUNGHO LEE ,  SEUNGJOON LEE ,  MINJI JUNG ,  MASATO FUJITA

IPC: H01L27/146

Abstract: An image sensor includes a substrate having a sensing area, a floating diffusion region arranged in the sensing area, a plurality of photodiodes arranged around the floating diffusion region in the sensing area, and an inter-pixel overflow (IPO) barrier in contact with each of the plurality of photodiodes, the IPO barrier overlapping the floating diffusion region in a vertical direction at a position vertically spaced apart from the floating diffusion region within the sensing area.

公开(公告)号：US20200344433A1

公开(公告)日：2020-10-29

申请号：US16745909

申请日：2020-01-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MASATO FUJITA ,  KYUNGHO LEE

IPC: H04N5/374 ,  H04N5/378 ,  H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a transfer gate electrode provided on the first surface of the semiconductor substrate, readout circuit transistors spaced apart from the transfer gate electrode and provided on the first surface of the semiconductor substrate, and a photoelectric conversion layer provided in the semiconductor substrate at a side of the transfer gate electrode and including dopants of a first conductivity type. The photoelectric conversion layer includes a first region having a first thickness and a second region having a second thickness that is less than the first thickness. The second region overlaps with at least a portion of the readout circuit transistors in a direction perpendicular to the first surface of the semiconductor substrate.