公开(公告)号：US10312153B2

公开(公告)日：2019-06-04

申请号：US15914125

申请日：2018-03-07

申请人： Samsung Electronics Co., Ltd.

发明人： Kyungin Choi ,  Ah-Young Cheon ,  Kwang-Yong Yang ,  Myungil Kang ,  Dohyoung Kim ,  YoonHae Kim

IPC分类号： H01L29/66 ,  H01L21/265 ,  H01L27/092 ,  H01L29/165 ,  H01L21/8238

摘要： Semiconductor devices are providing including a first isolation region configured to define a first fin active region protruding from a substrate, first gate patterns on the first fin active region, and a first epitaxial region in the first fin active region between the first gate patterns. Sidewalls of the first epitaxial region have first inflection points so that an upper width of the first epitaxial region is greater than a lower width of the first epitaxial region.

公开(公告)号：US09941174B2

公开(公告)日：2018-04-10

申请号：US15007711

申请日：2016-01-27

申请人： Samsung Electronics Co., Ltd

发明人： Kyungin Choi ,  Ah-Young Cheon ,  Kwang-Yong Yang ,  Myungil Kang ,  Dohyoung Kim ,  YoonHae Kim

IPC分类号： H01L31/0312 ,  H01L21/8238 ,  H01L29/66 ,  H01L27/092 ,  H01L21/265 ,  H01L29/165

CPC分类号： H01L21/823814 ,  H01L21/26586 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/165 ,  H01L29/66545

摘要： Semiconductor devices are providing including a first isolation region configured to define a first fin active region protruding from a substrate, first gate patterns on the first fin active region, and a first epitaxial region in the first fin active region between the first gate patterns. Sidewalls of the first epitaxial region have first inflection points so that an upper width of the first epitaxial region is greater than a lower width of the first epitaxial region.