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公开(公告)号：US10733017B2
公开(公告)日：2020-08-04
申请号：US15115641
申请日：2015-01-29
发明人： Dohyoung Kim , Joohwan Kim , Hyunjin Park , Changhwan Youn , Donghee Han
摘要： Provided is a task scheduling method. The method may include: assigning a task to one of first processing units functionally connected to an electronic device; and migrating, at least partially on the basis of a performance control condition related to the task, the task to one of second processing units for processing.
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公开(公告)号：US10200450B2
公开(公告)日：2019-02-05
申请号：US15435594
申请日：2017-02-17
发明人： Dohyoung Kim , Minkyung Kim , Wansoo Lim , Youngmi Kim
IPC分类号： G06F15/16 , H04L29/08 , G06F3/0482 , G06F17/30 , G06F3/0484
摘要： An apparatus and method for sharing data between a cloud server and at last one terminal are provided. The method includes displaying, when a data type is selected on a setting menu screen of a cloud service, meta information of real data corresponding to the selected data type, the meta information being downloaded from a server, downloading, when a piece of meta information is selected, the real data corresponding to the selected piece of meta information from the server, and deleting, when the downloaded real data is consumed completely, the consumed real data.
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公开(公告)号：US10186457B2
公开(公告)日：2019-01-22
申请号：US15794107
申请日：2017-10-26
发明人： Sungwoo Myung , GeumJung Seong , Jisoo Oh , JinWook Lee , Dohyoung Kim , Yong-Ho Jeon
IPC分类号： H01L27/088 , H01L21/768 , H01L29/78 , H01L23/535 , H01L29/66
摘要： A semiconductor device includes an active pattern, a gate electrode, a gate capping pattern, and a gate spacer. The active pattern extends in a first direction parallel to a top surface of the substrate. The gate electrode extends in a second direction parallel to the top surface of the substrate and intersects the active pattern. The gate capping pattern covers a top surface of the gate electrode and extends in a direction crossing the top surface of the substrate to cover a first sidewall of the gate electrode. The gate spacer covers a second sidewall of the gate electrode. The first sidewall and the second sidewall are opposite to each other in the second direction.
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公开(公告)号：US11325473B2
公开(公告)日：2022-05-10
申请号：US17132261
申请日：2020-12-23
发明人： Dohyoung Kim , Changyoul Lee , Kwaneui Hong , Byunghoon Min , Deokyeol Lee , Yongjun Lim , Jaemo Choi
IPC分类号： B60K37/02 , G06F3/0488
摘要： An electronic device is provided. The electronic device includes a first device including a first housing having a first surface and a second surface facing opposite to the first surface, and a first display disposed in the first housing and visually exposed through the first surface, a second device including a second housing having a third surface, and a second display disposed in the second housing and visually exposed through the third surface, an assembly connecting the first device and the second device, a processor and a memory that stores instructions that, when executed, cause the processor to control the assembly so that the second surface faces the third surface and covers the second display in a first state, and control the assembly so that the second surface does not cover the second display in a second state.
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5.发明授权公开(公告)号：US10146582B2
公开(公告)日：2018-12-04
申请号：US14790586
申请日：2015-07-02
发明人： Joohwan Kim , Dohyoung Kim , Hyunjin Park
IPC分类号： G06F9/50
摘要： A method for determining task priorities in an electronic device is provided. The method includes receiving, at the electronic device, a request to perform a task, identifying a threshold parameter and a weighted value in accordance with a type of the requested task, measuring the threshold parameter of the task based on the identified weighted value, and assigning the requested task to one of a first operational unit and a second operational unit based on the measured threshold parameter and weighted value.
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公开(公告)号：US09690618B2
公开(公告)日：2017-06-27
申请号：US14789613
申请日：2015-07-01
发明人： Hyunjin Park , Dohyoung Kim , Joohwan Kim
CPC分类号： G06F9/4868 , G06F9/4881 , G06F9/50 , G06F9/5088
摘要： A method for task scheduling and an electronic device using the same are provided. The method for scheduling tasks in an electronic device includes assigning a task to one of first processing units functionally connected to the electronic device, measuring a task load of the task, and controlling migration of the task to one of second processing units functionally connected to the electronic device based on the task load.
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公开(公告)号：US09210076B2
公开(公告)日：2015-12-08
申请号：US13774500
申请日：2013-02-22
发明人： Wansoo Lim , Dohyoung Kim , Minkyung Kim , Youngmi Kim
IPC分类号： G06F15/173 , H04L12/771 , G06F17/30 , H04L29/08
CPC分类号： H04L45/563 , G06F17/30905 , H04L67/06 , H04L67/10
摘要： A method of processing data of a terminal device is provided. The method includes processing selected cloud data, requesting a download of the selected cloud data when selecting a function menu while processing the selected cloud data, downloading the cloud data, and automatically setting the downloaded cloud data as data of the selected function.
摘要翻译： 提供一种处理终端设备的数据的方法。 该方法包括处理所选择的云数据，在处理选定的云数据时选择功能菜单时请求下载所选择的云数据，下载云数据，以及自动将下载的云数据设置为所选函数的数据。
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8.发明申请公开(公告)号：US20150347184A1
公开(公告)日：2015-12-03
申请号：US14722464
申请日：2015-05-27
发明人： Joohwan Kim , Dohyoung Kim , Hyunjin Park
CPC分类号： G06F9/4856 , G06F9/5088 , Y02D10/32
摘要： Provided is a method for task migration in an electronic device. The method includes: assigning a task with a specific function to a first group among groups formed according to a preset criterion; assigning the first group to one of first processing units functionally connected to the electronic device; and migrating, when the first group matches preset criteria of second processing units functionally connected to the electronic device, the first group to one of the second processing units. Based on this, it is possible to create various other embodiments.
摘要翻译： 提供了一种用于电子设备中的任务迁移的方法。 该方法包括：根据预设的标准将组中具有特定功能的任务分配给组中的第一组; 将所述第一组分配给功能上连接到所述电子设备的第一处理单元之一; 以及当所述第一组匹配与所述电子设备功能性连接的第二处理单元的预设标准时，将所述第一组移动到所述第二处理单元之一。 基于此，可以创建各种其他实施例。
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9.发明授权Methods of manufacturing semiconductor devices including capped metal patterns with air gaps in-between for parasitic capacitance reduction 有权制造半导体器件的方法，其包括封装金属图案，其间具有用于寄生电容降低的气隙公开(公告)号：US09171755B2
公开(公告)日：2015-10-27
申请号：US14453310
申请日：2014-08-06
发明人： Euibok Lee , Jongmin Baek , Dohyoung Kim , Tsukasa Matsuda , Youngwoo Cho , Jongseo Hong
IPC分类号： H01L21/768 , H01L21/02 , H01L21/764 , H01L21/762
CPC分类号： H01L21/7682 , H01L21/02296 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/762 , H01L21/764 , H01L21/76802 , H01L21/76849 , H01L21/76882 , H01L21/76883 , H01L21/76885
摘要： A method of manufacturing a semiconductor device may include: forming an interlayer insulating layer having openings on a substrate; forming a metal layer in the openings and on the interlayer insulating layer, the metal layer including a sidewall portion on a sidewall of each of the openings and a bottom portion on a bottom surface of each of the openings, wherein the bottom portion is thicker than the sidewall portion; reflowing the metal layer to form metal patterns in the openings, the metal patterns having top surfaces at a level lower than a topmost surface of the interlayer insulating layer; and/or forming capping patterns covering the metal patterns in the openings.
摘要翻译： 制造半导体器件的方法可以包括：在衬底上形成具有开口的层间绝缘层; 在开口和层间绝缘层上形成金属层，金属层包括在每个开口的侧壁上的侧壁部分和在每个开口的底表面上的底部，其中底部部分比 侧壁部分; 回流金属层以在开口中形成金属图案，金属图案具有位于层间绝缘层的最上表面以下的顶表面; 和/或形成覆盖开口中的金属图案的覆盖图案。
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公开(公告)号：US20140210017A1
公开(公告)日：2014-07-31
申请号：US14243358
申请日：2014-04-02
发明人： Myeongcheol Kim , Sooyeon Jeong , Joon Goo Hong , Dohyoung Kim , Yongjin Kim , Jin Wook Lee , Yoonhae Kim
IPC分类号： H01L29/49
CPC分类号： H01L29/4966 , H01L21/76804 , H01L21/76831 , H01L21/76895 , H01L21/76897 , H01L29/4958 , H01L29/4975 , H01L29/66545
摘要： A semiconductor device and a method of forming the semiconductor device includes: forming gate electrodes on a semiconductor substrate and forming spacers on both side surfaces of the gate electrodes; forming capping patterns on the gate electrodes; and forming a metal contact between the gate electrodes. Each of the capping patterns is formed to have a width greater than a width of each of the gate electrodes.
摘要翻译： 半导体器件和形成半导体器件的方法包括：在半导体衬底上形成栅电极并在栅电极的两个侧表面上形成间隔物; 在栅电极上形成封盖图案; 以及在栅电极之间形成金属接触。 每个封盖图案形成为具有大于每个栅电极的宽度的宽度。
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