公开(公告)号：US20170194324A1

公开(公告)日：2017-07-06

申请号：US15461934

申请日：2017-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Se-Wan PARK ,  Baik-Min SUNG ,  Bo-Cheol JEONG

IPC: H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/7851 ,  H01L29/7853 ,  H01L29/7854

Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.

公开(公告)号：US20170110569A1

公开(公告)日：2017-04-20

申请号：US15292144

申请日：2016-10-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chong-Kwang CHANG ,  Young-Mook OH ,  Hak-Yoon AHN ,  Jung-Gun YOU ,  Gi-Gwan PARK ,  Baik-Min SUNG

IPC: H01L29/78 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L29/785 ,  H01L21/76807 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53295 ,  H01L2029/7858

Abstract: A semiconductor device includes a gate structure on a substrate, a source/drain layer on a portion of the substrate adjacent the gate structure, a first contact plug contacting an upper surface of the source/drain layer, and a second contact plug contacting upper surfaces of the gate structure and the first contact plug. A bottom surface of the second contact plug has a first portion not contacting the upper surface of the first contact plug, and the first portion is higher than the upper surface of the gate structure.