公开(公告)号：US09892983B2

公开(公告)日：2018-02-13

申请号：US14975706

申请日：2015-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Kook Kim ,  Bang-Won Kim ,  Yu-Sin Yang ,  Young-Jee Yoon ,  Sang-Kil Lee ,  Yoo-Seok Jang ,  Chung-Sam Jun

IPC: C30B25/16 ,  H01L21/66 ,  C30B29/40 ,  C30B29/52

CPC classification number: H01L22/26 ,  C30B25/165 ,  C30B29/40 ,  C30B29/52 ,  H01L22/12

Abstract: An apparatus and method of forming an epitaxial layer are provided. The apparatus includes a process chamber in which an epitaxial process is performed to form epitaxial layer on a substrate. A first supplier supplies source gases for the epitaxial layer into the process chamber. A second supplier supplies dopants into the process chamber. A detector detects a composition ratio of the epitaxial layer and a concentration of the dopants in the epitaxial layer during the epitaxial growth process. And a controller controls a mass flow of at least one of the source gases and a mass flow of the dopants in-line with the epitaxial growth process. Accordingly, the layer thickness of the epitaxial layer can be accurately controlled in real time in line with the epitaxial process.