公开(公告)号：US11855013B2

公开(公告)日：2023-12-26

申请号：US17834020

申请日：2022-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-Ho You ,  Seongho Shin ,  Bangweon Lee

IPC: H01L23/66 ,  H01L23/00

CPC classification number: H01L23/66 ,  H01L24/20 ,  H01L2223/6616 ,  H01L2223/6677 ,  H01L2924/1421

Abstract: A semiconductor device may include a substrate, a first semiconductor chip buried in the substrate, a first antenna pattern, a second antenna pattern, and outer terminals. A bottom surface of the substrate may include first and second regions spaced apart from each other. The first semiconductor chip may have a first active surface that is directed to the top surface of a core portion of the substrate. The first antenna pattern may be provided on the top surface of the substrate and electrically connected to the first semiconductor chip. The outer terminals may be provided on the first region of the bottom surface of the substrate, and the second antenna pattern may be provided on the second region of the bottom surface of the substrate.

公开(公告)号：US11935812B2

公开(公告)日：2024-03-19

申请号：US17209974

申请日：2021-03-23

Applicant: Samsung Electronics Co., Ltd. ,  UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY

Inventor： Seunggeol Ryu ,  Seokkan Ki ,  Youngsuk Nam ,  Jaechoon Kim ,  Bangweon Lee ,  Seungtae Hwang

IPC: H01L23/373 ,  H01L23/473

CPC classification number: H01L23/3736 ,  H01L23/473

Abstract: A semiconductor package may include a package substrate, a semiconductor chip on the package substrate, a heat dissipation member on the semiconductor chip, and a first thermal interface material coated on an upper surface of the semiconductor chip to bond the semiconductor chip and the heat dissipation member. The first thermal interface material may include a liquid metal and fine particles disposed inside the liquid metal. The fine particles may have no oxide layer on a surface thereof. A volume percentage of the fine particles in the liquid metal including the fine particles therein may be about 1% to about 5%. A thermal conductivity of the liquid metal including the fine particles therein may be equal to or more than about 40 W/m·K.

公开(公告)号：US12243803B2

公开(公告)日：2025-03-04

申请号：US18437385

申请日：2024-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunggeol Ryu ,  Seokkan Ki ,  Youngsuk Nam ,  Jaechoon Kim ,  Bangweon Lee ,  Seungtae Hwang

IPC: H01L23/373 ,  H01L23/473

Abstract: A method of manufacturing a thermal interface material may include mixing fine particles with an acidic solution to remove a first oxide layer from a surface of each of the fine particles, injecting a liquid metal into the acidic solution to remove a second oxide layer from a surface of the liquid metal and for the fine particles from which the first oxide layer is removed in the acidic solution to penetrate into the liquid metal from which the second oxide layer is remove, and extracting the liquid metal including the fine particles therein from the acidic solution.

公开(公告)号：US20240186215A1

公开(公告)日：2024-06-06

申请号：US18437385

申请日：2024-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunggeol Ryu ,  Seokkan Ki ,  Youngsuk Nam ,  Jaechoon Kim ,  Bangweon Lee ,  Seungtae Hwang

IPC: H01L23/373 ,  H01L23/473

CPC classification number: H01L23/3736 ,  H01L23/473

Abstract: A method of manufacturing a thermal interface material may include mixing fine particles with an acidic solution to remove a first oxide layer from a surface of each of the fine particles, injecting a liquid metal into the acidic solution to remove a second oxide layer from a surface of the liquid metal and for the fine particles from which the first oxide layer is removed in the acidic solution to penetrate into the liquid metal from which the second oxide layer is remove, and extracting the liquid metal including the fine particles therein from the acidic solution.

公开(公告)号：US11380635B2

公开(公告)日：2022-07-05

申请号：US17121898

申请日：2020-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-Ho You ,  Seongho Shin ,  Bangweon Lee

IPC: H01L23/66 ,  H01L23/00

Abstract: A semiconductor device may include a substrate, a first semiconductor chip buried in the substrate, a first antenna pattern, a second antenna pattern, and outer terminals. A bottom surface of the substrate may include first and second regions spaced apart from each other. The first semiconductor chip may have a first active surface that is directed to the top surface of a core portion of the substrate. The first antenna pattern may be provided on the top surface of the substrate and electrically connected to the first semiconductor chip. The outer terminals may be provided on the first region of the bottom surface of the substrate, and the second antenna pattern may be provided on the second region of the bottom surface of the substrate.