公开(公告)号：US20170005162A1

公开(公告)日：2017-01-05

申请号：US15268833

申请日：2016-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Hyun NOH ,  Su-Tae KIM ,  Jae-Hyun YOO ,  Byeong-Ryeol LEE ,  Jong-Sung JEON

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/08 ,  H01L29/10 ,  H01L29/78

CPC classification number: H01L29/063 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/1054 ,  H01L29/1095 ,  H01L29/161 ,  H01L29/165 ,  H01L29/408 ,  H01L29/4238 ,  H01L29/66545 ,  H01L29/66659 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/785 ,  H01L29/7851

Abstract: Semiconductor devices include a channel layer on a substrate, the channel layer including a material having a lattice constant different from a lattice constant of the substrate, a first gate electrode on the channel layer, a first source region of a first conductivity type at a first side of the first gate electrode, a first body region of a second conductivity type under the first source region and contacting the first source region, a first drain region of the first conductivity type disposed at a second side of the first gate electrode, a first drift region of the first conductivity type under the first drain region and contacting the first drain region, and a first stud region in the channel layer and the first drift region. The first stud region has an impurity concentration higher than an impurity concentration of the first drift region.

Abstract translation: 半导体器件包括在衬底上的沟道层，沟道层包括具有不同于衬底的晶格常数的晶格常数的材料，沟道层上的第一栅电极，第一导电类型的第一源极区 在所述第一源极区域的第一导电类型的第一主体区域和与所述第一源极区域接触的第一导电类型的第一主体区域，设置在所述第一栅极电极的第二侧的所述第一导电类型的第一漏极区域， 在第一漏区下面的第一导电类型的漂移区，并与第一漏极区以及沟道层和第一漂移区中的第一柱状区域接触。 第一螺柱区域的杂质浓度高于第一漂移区域的杂质浓度。