公开(公告)号：US20220310407A1

公开(公告)日：2022-09-29

申请号：US17701846

申请日：2022-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dohoon KIM ,  Wonwoong CHUNG ,  Taehyung KIM ,  Heejun PARK ,  Handuck SONG ,  Heonjong JEONG ,  Younglae KIM ,  Byeongok CHO

IPC: H01L21/467 ,  H01L21/311 ,  C09K13/00

Abstract: An etching gas composition includes a first organofluorine compound having 3 to 6 carbon atoms, and an organosulfur compound having 1 to 4 sulfur atoms. The organosulfur compound may include a carbon-fluorine (C—F) bond, a carbon-sulfur (C—S) bond, at least one carbon-carbon double (—C═C—) bond. When the etching gas composition is used, excellent etch selectivity may be obtained, and the linearity and verticality of a pattern may be greatly increased by improving line edge roughness (LER) and line width roughness (LWR) due to an improvement in the roughness of an etched surface.