公开(公告)号：US20040192001A1

公开(公告)日：2004-09-30

申请号：US10795175

申请日：2004-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwa-sung Rhee ,  Jae-yoon Yoo ,  Ho Lee ,  Seung-hwan Lee ,  Byou-ree Lim

IPC: H01L021/331

CPC classification number: H01L29/66287 ,  H01L29/0804 ,  H01L29/7375 ,  H01L29/7378

Abstract: A method of manufacturing a bipolar device including pre-treatment using germane gas and a bipolar device manufactured by the same. The method includes forming a single crystalline silicon layer for a base region on a collector region; and forming a polysilicon layer for an emitter region thereon. Here, before the polysilicon layer is formed, the single crystalline silicon layer is pre-treated using germane gas. Thus, an oxide layer is removed from the single crystalline silicon layer, and a germanium layer is formed on the single crystalline silicon layer, thus preventing Si-rearrangement.

Abstract translation: 一种制造双极器件的方法，其包括使用锗烷气体的预处理和由其制造的双极器件。 该方法包括在集电区上形成用于基区的单晶硅层; 并在其上形成发射极区的多晶硅层。 这里，在形成多晶硅层之前，使用锗烷气预处理单晶硅层。 因此，从单晶硅层去除氧化物层，并且在单晶硅层上形成锗层，从而防止Si重排。