公开(公告)号：US20230180476A1

公开(公告)日：2023-06-08

申请号：US18054730

申请日：2022-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungmin Lee ,  Junhyoung Kim ,  Jisu Shin ,  Byungik Yoo ,  Joon-Sung Lim

IPC: H01L27/11582 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11573

CPC classification number: H01L27/11582 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11573

Abstract: A three-dimensional semiconductor memory device and an electronic system including the same are discussed. The device may include: a stack structure including electrode layers and inter-electrode insulating layers that are alternately stacked on a substrate; one or more vertical semiconductor structures that extend into the stack structure and are adjacent to the substrate; one or more vertical conductive structures arranged in a first direction between adjacent ones of the one or more vertical semiconductor structures and extending into the stack structure and are adjacent to the substrate; and a conductive line portion on the stack structure that extends in the first direction to connect the one or more vertical conductive structures to each other. The conductive line portion and the vertical conductive structures may be connected to form a single unit.