公开(公告)号：US20240233831A1

公开(公告)日：2024-07-11

申请号：US18512746

申请日：2023-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byungkyu CHO ,  Hyunkook PARK

IPC: G11C16/22 ,  G11C16/10

CPC classification number: G11C16/22 ,  G11C16/10 ,  G11C16/0483

Abstract: An operating method of a non-volatile memory device including a plurality of cell strings connected to a plurality of word lines, string select lines, and ground select lines includes applying a program voltage to a selected word line among the word lines during a program execution period, determining a discharge voltage by comparing the program voltage with a negative discharge reference voltage during the program execution period, applying a precharge voltage, which is less than the program voltage and greater than the discharge voltage, to the string select lines up to a first time point during a verify period following the program execution period, and applying the discharge voltage to a substrate of a string select transistor, which is connected to an unselected string select line among the string select lines, up to a second time point after the first time point during the verify period.